BC182B Fairchild Semiconductor, BC182B Datasheet

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... Base-Emitter Saturation Voltage BE V (on) Base-Emitter On Voltage BE Dynamic Characteristics f Current Gain Bandwidth Product T C Output Capacitance ob h Small Signal Current Gain fe NF Noise Figure ©2003 Fairchild Semiconductor Corporation BC182B T =25 C unless otherwise noted C Parameter - Continuous T =25 C unless otherwise noted C Test Condition I = 2mA ...

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... Thermal Characteristics Symbol P Total Device Dissipation @T D Derate above Thermal Resistance, Junction to Ambient JA R Thermal Resistance, Junction to Case JC ©2003 Fairchild Semiconductor Corporation T =25 C unless otherwise noted A Parameter = Max. Units 350 mW 2.8 mW/ C 357 mW/ C 125 C/W Rev. A, August 2003 ...

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... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, August 2003 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...