MJ11032G ON Semiconductor, MJ11032G Datasheet - Page 2

• Manufacturer Part Number: MJ11032G
• Description: TRANS DARL NPN 50A 120V TO3
• Manufacturer: ON Semiconductor
• Type: High Current, Powerr

Specifications of MJ11032G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 50A
• Voltage - Collector Emitter Breakdown (max): 120V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 500mA, 50A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 25A, 5V
• Power - Max: 300W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 120 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 120 V
• Maximum Dc Collector Current: 50 A
• Power Dissipation: 0.3 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 50 A
• Dc Collector/base Gain Hfe Min: 1000
• Minimum Operating Temperature: - 55 C
• Current, Gain: 400
• Current, Input: 2 A
• Current, Output: 50 A
• Current, Output, Leakage: 2
• Package Type: TO-204 (TO-3)
• Polarity: NPN
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Input: 5 V
• Voltage, Output: 120 V
• Dc: 08+
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJ11032GOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Emitter Leakage Current
Emitter Cutoff Current
Collector−Emitter Leakage Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
(I
(V
(V
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
C
C
C
C
C
C
C
CE
CE
CE
CE
CE
BE
CE
= 1 00 mAdc, I
= 25 Adc, V
= 50 Adc, V
= 25 Adc, I
= 50 Adc, I
= 25 Adc, I
= 50 Adc, I
= 5 Vdc, I
= 60 Vdc, R
= 90 Vdc, R
= 120 Vdc, R
= 60 Vdc, R
= 120 Vdc, R
= 50 Vdc, I
BASE
B
B
B
B
MJ11029
MJ11033
C
CE
CE
= 250 mAdc)
= 500 mAdc)
= 200 mAdc)
= 300 mAdc)
B
PNP
= 0)
BE
BE
BE
B
= 0)
= 5 Vdc)
= 5 Vdc)
BE
BE
= 0)
= 1 kW)
= 1 kW)
= 1 kW, T
= 1 kW)
= 1 kW, T
≈ 3.0 k
C
Characteristic
C
= 150_C)
= 150_C)
(T
C
Figure 1. Darlington Circuit Schematic
= 25_C unless otherwise noted)
≈ 25
COLLECTOR
EMITTER
http://onsemi.com
2
BASE
MJ11028
MJ11030
MJ11032
MJ11028, MJ11029
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
MJ11028, MJ11029
MJ11032, MJ11033
NPN
MJ11030
MJ11030
≈ 3.0 k
≈ 25
V
COLLECTOR
Symbol
V
V
(BR)CEO
I
CE(sat)
BE(sat)
EMITTER
I
I
h
CER
EBO
CEO
FE
Min
120
400
1 k
60
90
−
−
−
−
−
−
−
−
−
−
−
Max
18 k
2.5
3.5
3.0
4.5
10
10
−
−
−
2
2
2
5
2
−
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
−