MJH6287G ON Semiconductor, MJH6287G Datasheet - Page 2

• Manufacturer Part Number: MJH6287G
• Description: TRANS DARL PNP 20A 100V TO218
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of MJH6287G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 20A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 200mA, 20A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 10A, 3V
• Power - Max: 160W
• Frequency - Transition: 4MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 20 A
• Maximum Collector Cut-off Current: 1000 uA
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 20 A
• Dc Collector/base Gain Hfe Min: 100, 750
• Minimum Operating Temperature: - 65 C
• Current, Gain: 100
• Current, Input: 0.5 A
• Current, Output: 20 A
• Package Type: SOT-93 (TO-218)
• Polarity: PNP
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJH6287GOS

1. Pulse test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector-Emitter Sustaining Voltage (I
Collector Cutoff Current (V
Collector Cutoff Current
Emitter Cutoff Current (V
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage (I
Base-Emitter Saturation Voltage (I
Current-Gain Bandwidth Product (I
Output Capacitance
Small-Signal Current Gain (I
Delay Time
Rise Time
Storage Time
Fall Time
APPROX
APPROX
R
D
- 8.0 V
+12 V
B
1
, MUST BE FAST RECOVERY TYPES, e.g.:
V2
V1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
& R
(V
(V
(I
(I
(I
(I
(V
C
C
C
C
CE
CE
CB
t
DUTY CYCLE = 1.0%
C
0
r
, t
= 10 Adc, V
= 20 Adc, V
= 10 Adc, I
= 20 Adc, I
VARIED TO OBTAIN DESIRED CURRENT LEVELS
f
, ≤ 10 ns
= Rated V
= Rated V
= 10 Vdc, I
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
B
B
CE
CE
CB
CB
= 40 mAdc)
= 200 mAdc)
E
, V
, V
= 0, f = 0.1 MHz)
= 3.0 Vdc)
= 3.0 Vdc)
25 ms
B
V
I
Duty Cycle = 1.0%
≈ 100 mA
BE(off)
BE(off)
B1
B
BE
CC
≈ 100 mA
CE
C
= I
= 5.0 Vdc, I
C
= 30 Vdc, I
= 10 Adc, V
= 50 Vdc, I
B2
= 1.5 Vdc)
= 1.5 Vdc, T
= 10 Adc, V
51
= 100 mA
Resistive Load
Characteristic
C
C
R
D
= 20 Adc, I
B
= 10 Adc, V
+ 4.0 V
1
C
C
C
for t
and V2 = 0
= 0.1 Adc, I
B
CE
= 0)
= 10 Adc
(T
= 0)
CE
C
d
MJH6284 (NPN), MJH6287 (PNP)
C
= 3.0 Vdc)
≈ 8.0 k
and t
= 150_C)
= 25_C unless otherwise noted)
= 3.0 Vdc, f = 1.0 kHz)
B
CE
r
= 200 mAdc)
, D
TUT
B
= 3.0 Vdc, f = 1.0 MHz)
1
≈ 50
is disconnected
= 0)
- 30 V
V
CC
R
C
SCOPE
BASE
2
MJH6284
MJH6287
MJH6284
NPN
Figure 3. Darlington Schematic
COLLECTOR
V
Symbol
Symbol
V
V
V
EMITTER
CEO(sus)
I
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CEO
CEX
EBO
h
f
t
t
FE
t
t
T
ob
d
fe
s
r
f
BASE
NPN
Min
100
750
100
300
4.0
0.1
0.3
1.0
3.5
-
-
-
-
-
-
-
-
-
-
Typical
MJH6287
PNP
18,000
PNP
Max
400
600
1.0
0.5
5.0
2.0
2.0
3.0
2.8
4.0
0.1
0.3
1.0
2.0
-
-
-
-
COLLECTOR
EMITTER
mAdc
mAdc
mAdc
MHz
Unit
Unit
Vdc
Vdc
Vdc
Vdc
pF
ms
-
-