MJ15022G ON Semiconductor, MJ15022G Datasheet - Page 3

• Manufacturer Part Number: MJ15022G
• Description: TRANS PWR NPN 16A 200V TO3
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJ15022G

• Transistor Type: NPN
• Current - Collector (ic) (max): 16A
• Voltage - Collector Emitter Breakdown (max): 200V
• Vce Saturation (max) @ Ib, Ic: 4V @ 3.2A, 16A
• Current - Collector Cutoff (max): 500µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 8A, 4V
• Power - Max: 250W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 200 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 16 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 16 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 16 A
• Current, Gain: 5
• Frequency: 4 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.7 °C/W
• Voltage, Breakdown, Collector To Emitter: 200 V
• Voltage, Collector To Base: 350 V
• Voltage, Collector To Emitter: 200 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 200V
• Collector-base Voltage: 350V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 16A
• Dc Current Gain (min): 15
• Frequency (max): 4MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJ15022GOS

4000
3000
1000
500
100
200
100
5.0
1.0
40
50
20
10
0.2
0.3
0.5
1
0.5
Figure 4. DC Current Gain
I
V
C
Figure 2. Capacitances
, COLLECTOR CURRENT (AMPS)
R
, REVERSE VOLTAGE (VOLTS)
1.0
5.0
T
T
C
J
J
ib
= 25°C
= 100°C
2.0
10
1.8
1.4
1.0
0.6
0.2
C
0
ob
0.03
30
5.0
NPN − MJ15022, MJ15024*
Figure 6. Collector Saturation Region
50
TYPICAL CHARACTERISTICS
V
0.1
CE
I
C
T
= 4 A
= 4 V
100
J
10
= 25°C
http://onsemi.com
0.2
I
B
, BASE CURRENT (AMPS)
300
20
0.5
8 A
3
1.0
1.8
1.4
1.0
0.8
0.2
9
8
7
6
5
4
3
2
1
0
0
0.15
0.1
2.0
Figure 3. Current−Gain — Bandwidth Product
T
16 A
J
= 25°C
100°C
5.0
25°C
0.3
0.5
T
I
I
C
C
J
10
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
= 25°C
Figure 5. “On” Voltage
V
V
BE(on)
CE(sat)
0.5
1.0
30
@ V
@ I
CE
C
1.0
2.0
/I
B
= 4 V
= 10
100°C
2.0
5.0
T
V
f
Test
J
CE
= 25°C
= 10 V
= 1 MHz
5.0
10
10
20