2N6287G ON Semiconductor, 2N6287G Datasheet - Page 4

• Manufacturer Part Number: 2N6287G
• Description: TRANS DARL PNP 20A 100V TO-3
• Manufacturer: ON Semiconductor
• Type: Power, Switchr

Specifications of 2N6287G

• Transistor Type: PNP - Darlington
• Current - Collector (ic) (max): 20A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 3V @ 200mA, 20A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 750 @ 10A, 3V
• Power - Max: 160W
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 5 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 20 A
• Maximum Collector Cut-off Current: 500 uA
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 20 A
• Dc Collector/base Gain Hfe Min: 100, 750
• Minimum Operating Temperature: - 65 C
• Current, Gain: 100
• Current, Input: 0.5 A
• Current, Output: 20 A
• Package Type: TO-204AA (TO-3)
• Polarity: PNP
• Primary Type: Si
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Input: 5 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2N6287G; 2N6287GOS

0.05
5.0
2.0
1.0
0.5
0.2
0.1
V
50
20
10
CE
2.0
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
T
J
= 200°C
0.1 ms
0.5 ms
5.0
1.0 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
5.0 ms
SINGLE PULSE
10
dc
20
10,000
1000
5000
2000
1000
700
500
300
200
100
500
200
100
50
20
10
ACTIVE−REGION SAFE OPERATING AREA
C
0.1
= 25°C
1.0
50
0.2
100
Figure 6. Small−Signal Current Gain
2.0
2N6284 (NPN)
2N6287 (PNP)
0.5
2N6284 (NPN)
2N6287 (PNP)
5.0 10
V
http://onsemi.com
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.0
C
f, FREQUENCY (kHz)
ib
2.0
4
20
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
J(pk)
5.0
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
50 100
< 200_C. T
10
C
ob
T
V
I
C
J
CE
20
200
= 10 A
= 25°C
= 3.0 Vdc
T
J
= 25°C
J(pk)
500
50
1000
may be calculated from the data in
100
J(pk)
= 200_C; T
C
− V
C
CE
is