MJL3281AG ON Semiconductor, MJL3281AG Datasheet - Page 2

• Manufacturer Part Number: MJL3281AG
• Description: TRANS BIPO NPN 15A 200V TO264
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJL3281AG

• Transistor Type: NPN
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 260V
• Vce Saturation (max) @ Ib, Ic: 3V @ 1A, 10A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 5A, 5V
• Power - Max: 200W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 200V
• Collector-base Voltage(max): 230V
• Emitter-base Voltage (max): 7V
• Collector Current (dc) (max): 15A
• Power Dissipation: 200W
• Frequency (max): 30MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-3BPL
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 200 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 15 A
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 15 A
• Dc Collector/base Gain Hfe Min: 60
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 15 A
• Current, Gain: 45
• Frequency: 30 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.625 °C/W
• Voltage, Breakdown, Collector To Emitter: 260 V
• Voltage, Collector To Base: 260 V
• Voltage, Collector To Emitter: 260 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MJL3281AGOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector with Base Forward Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Current−Gain − Bandwidth Product
Output Capacitance
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
CB
EB
CE
CE
CB
= 100 mAdc, I
= 500 mAdc, V
= 1 Adc, V
= 3 Adc, V
= 5 Adc, V
= 8 Adc, V
= 10 Adc, I
= 1 Adc, V
= 5 Vdc, I
= 260 Vdc, I
= 50 Vdc, t = 1 s (non−repetitive)
= 100 Vdc, t = 1 s (non−repetitive)
= 10 Vdc, I
CE
CE
CE
CE
CE
B
C
= 1 Adc)
E
= 0)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc)
= 5 Vdc, f
B
E
CE
= 0, f
= 0)
= 0)
= 5 Vdc)
test
test
= 1 MHz)
Characteristic
= 1 MHz)
(T
MJL3281A (NPN) MJL1302A (PNP)
C
= 25°C unless otherwise noted)
2
V
Symbol
V
CEO(sus)
CE(sat)
I
I
h
C
CBO
EBO
I
S/b
f
FE
T
ob
Min
260
75
75
75
75
45
30
−
−
4
1
−
−
Max
150
150
150
150
600
50
−
5
−
−
−
3
−
μAdc
μAdc
MHz
Unit
Vdc
Adc
Vdc
pF