MJ4502G ON Semiconductor, MJ4502G Datasheet - Page 3

• Manufacturer Part Number: MJ4502G
• Description: TRANS PWR PNP 30A 100V TO3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of MJ4502G

• Transistor Type: PNP
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 750mA, 7.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 7.5A, 2V
• Power - Max: 200W
• Frequency - Transition: 2MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 90 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 2 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 30 A
• Current, Gain: 100
• Frequency: 2 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.875 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.8 V
• Voltage, Emitter To Base: 90 V
• Number Of Elements: 1
• Collector-emitter Voltage: 90V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 30A
• Dc Current Gain (min): 25
• Frequency (max): 2MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJ4502GOS

100
5.0
2.0
1.0
0.5
0.2
0.1
50
20
10
1.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.03
Figure 4. Active Region Safe Operating Area
T
J
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
= 200°C
0.05
2.0 3.0
V
CE
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS @ T
PULSE DUTY CYCLE v 10%
, COLLECTOR‐EMITTER VOLTAGE (VOLTS)
0.1
Figure 2. DC Current Gain
I
0.2 0.3
C
T
, COLLECTOR CURRENT (AMP)
5.0
J
- 55°C
= 175°C
25°C
dc
0.5
10
1.0
C
20
2.0
= 25°C
3.0 5.0
CBO
30
1.0 ms
.
5.0 ms
V
100 ms
50
CE
10
= 2.0 V
http://onsemi.com
100
20
30
3
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To
power−temperature derating must be observed for both
steady state and pulse power conditions.
The Safe Operating Area Curves indicate I
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.03 0.05
insure
V
V
BE(sat)
V
CE(sat)
T
0.1
BE
operation
J
= 25°C
@ V
@ I
@ I
I
0.2 0.3
C
Figure 3. “On” Voltages
CE
, COLLECTOR CURRENT (AMP)
C
C
/I
/I
B
= 2.0 V
B
= 10
= 10
0.5
below
1.0
2.0
the
3.0 5.0
maximum
C
− V
10
CE
limits
20
T
30
J
,