2N5302G ON Semiconductor, 2N5302G Datasheet

2N5302G

Manufacturer Part Number

2N5302G

Description

TRANS NPN PWR GP 30A 60V TO3

Manufacturer

ON Semiconductor

Datasheet

1.2N5302G.pdf (5 pages)

Specifications of 2N5302G

Transistor Type

NPN

Current - Collector (ic) (max)

30A

Voltage - Collector Emitter Breakdown (max)

60V

Vce Saturation (max) @ Ib, Ic

3V @ 6A, 30A

Current - Collector Cutoff (max)

5mA

Dc Current Gain (hfe) (min) @ Ic, Vce

15 @ 15A, 2V

Power - Max

200W

Frequency - Transition

2MHz

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

60 V

Maximum Dc Collector Current

30 A

Power Dissipation

200 W

Maximum Operating Temperature

+ 200 C

Continuous Collector Current

30 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

2 MHz

Minimum Operating Temperature

- 65 C

Number Of Elements

Collector-emitter Voltage

60V

Collector-base Voltage

60V

Collector Current (dc) (max)

30A

Dc Current Gain (min)

Frequency (max)

2MHz

Operating Temp Range

-65C to 200C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

2 +Tab

Package Type

TO-204

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N5302GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5302G

Manufacturer:

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5302GE/BCA

Manufacturer:

SONY

Quantity:

2 000

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2N5302

High−Power NPN Silicon

Transistor

and switching circuits applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC Registered Data.

2. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

*For additional information on our Pb−Free strategy and soldering details, please

March, 2006− Rev. 2

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Collector Current − Continuous (Note 2)

Base Current

Total Device Dissipation @ T

Derate above 25_C

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

Thermal Resistance, Case−to−Ambient

High−power NPN silicon transistors are for use in power amplifier

Low Collector−Emitter Saturation Voltage −

Pb−Free Package is Available*

8.0

6.0

4.0

2.0

200

150

100

CE(sat)

Figure 1. Power Temperature Derating Curve

Characteristic

= 0.75 Vdc (Max) @ I

Rating

(Note 1) (T

TEMPERATURE (°C)

= 25_C

= 25°C unless otherwise noted)

Î Î Î Î

100

= 10 Adc

Symbol

120

CEO

, T

stg

140

Î Î Î Î

– 65 to + 200

160

Value

0.875

1.14

Max

200

7.5

180

Î Î Î

200

W/_C

_C/W

Unit

Vdc

Adc

2N5302

2N5302G

Device

POWER TRANSISTOR

60 VOLTS, 200 WATTS

ORDERING INFORMATION

2N5302 = Device Code

MEX

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

30 AMPERES

TO−204AA (TO−3)

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Origin

(Pb−Free)

Package

CASE 1−07

TO−204

2N5302G

STYLE 1

AYYWW

MEX

Publication Order Number:

100 Units/Tray

Shipping

2N5302/D

Related parts for 2N5302G

2N5302G Summary of contents

Page 1

... TO−204AA (TO−3) CASE 1−07 STYLE 1 MARKING DIAGRAM 2N5302G AYYWW MEX 2N5302 = Device Code G = Pb−Free Package A = Location Code YY = Year WW = Work Week MEX = Country of Origin ORDERING INFORMATION Device Package Shipping 2N5302 TO−204 100 Units/Tray 2N5302G TO−204 100 Units/Tray (Pb−Free) Publication Order Number: 2N5302/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 100 5.0 ms 5302 5.0 1 ...

Page 4

T = 175°C J 200 25°C 100 70 50 −55 ° 0.03 0.05 0.1 0.3 0.5 1.0 3 COLLECTOR CURRENT (AMP) C Figure 9. DC Current Gain ...

Page 5

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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