MJ802G ON Semiconductor, MJ802G Datasheet - Page 3

• Manufacturer Part Number: MJ802G
• Description: TRANS PWR NPN 90V 30A TO3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of MJ802G

• Transistor Type: NPN
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 90V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 750mA, 7.5A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 7.5A, 2V
• Power - Max: 200W
• Frequency - Transition: 2MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 90 V
• Emitter- Base Voltage Vebo: 4 V
• Maximum Dc Collector Current: 30 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 30 A
• Dc Collector/base Gain Hfe Min: 25
• Maximum Operating Frequency: 2 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 30 A
• Current, Gain: 100
• Frequency: 2 MHz
• Package Type: TO-204AA (TO-3)
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.875 °C/W
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 0.8 V
• Voltage, Emitter To Base: 4 V
• Number Of Elements: 1
• Collector-emitter Voltage: 90V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 30A
• Dc Current Gain (min): 25
• Frequency (max): 2MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MJ802GOS

100
5.0
2.0
1.0
0.5
0.2
0.1
50
20
10
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.03
Figure 4. Active Region Safe Operating Area
T
0.05
J
= 200° C
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF I
2.0 3.0
V
CE
0.1
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS T
PULSE DUTY CYCLE ≤ 10%
Figure 2. DC Current Gain
I
0.2 0.3 0.5
C
, COLLECTOR CURRENT (AMP)
5.0
T
J
= 175° C
− 55°C
25°C
dc
10
1.0
C
2.0 3.0 5.0
= 25°C
20
30
100 ms
V
CBO
CE
5.0 ms
= 2.0 V
.
50
10
1.0 ms
http://onsemi.com
20 30
100
MJ802
3
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum T
temperature derating must be observed for both steady state
and pulse power conditions.
The Safe Operating Area Curves indicate I
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.03
0.05
V
BE(sat)
V
CE(sat)
0.1
V
@ I
BE
@ V
T
C
I
@ I
Figure 3. ‘‘On” Voltages
C
J
/I
0.2 0.3 0.5
, COLLECTOR CURRENT (AMP)
B
= 25°C
CE
C
= 10
/I
B
= 2.0 V
= 10
1.0
2.0 3.0 5.0
C
− V
10
J
CE
, power
limits
20 30