MJE18008G ON Semiconductor, MJE18008G Datasheet - Page 7

• Manufacturer Part Number: MJE18008G
• Description: TRANS PWR NPN 8A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18008G

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 900mA, 4.5V
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 125W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 450 V
• Emitter- Base Voltage Vebo: 9 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 14
• Maximum Operating Frequency: 13 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE18008GOS

ORDERING INFORMATION
MJE18008
MJE18008G
MJF18008
MJF18008G
0.01
0.01
0.1
0.1
1
1
0.01
0.01
D = 0.5
D = 0.5
0.05
0.02
0.05
0.02
0.2
0.1
0.2
0.1
SINGLE PULSE
Device
SINGLE PULSE
0.1
0.1
Figure 20. Typical Thermal Response (Z
Figure 21. Typical Thermal Response (Z
1
TYPICAL THERMAL RESPONSE
http://onsemi.com
1
TO−220 (Fullpack)
TO−220 (Fullpack)
10
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
Package
t, TIME (ms)
t, TIME (ms)
7
P
P
(pk)
(pk)
DUTY CYCLE, D = t
DUTY CYCLE, D = t
100
t
t
1
1
10
qJC
qJC
t
t
2
2
(t)) for MJE18008
(t)) for MJF18008
1
1
/t
/t
2
2
1000
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
J(pk)
qJC
qJC
qJC
qJC
(t) = r(t) R
(t) = r(t) R
= 1.0°C/W MAX
= 2.78°C/W MAX
- T
- T
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
100
Shipping
C
C
= P
= P
qJC
(pk)
qJC
(pk)
10000
1
1
R
R
qJC
qJC
(t)
(t)
100000
1000