2SA1862TLP Rohm Semiconductor, 2SA1862TLP Datasheet
2SA1862TLP
Manufacturer Part Number
2SA1862TLP
Description
TRANSISTOR PNP 400V 2A SOT-428
Manufacturer
Rohm Semiconductor
Specifications of 2SA1862TLP
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
500mV @ 100mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
82 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
18MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
- 400 V
Emitter- Base Voltage Vebo
- 7 V
Maximum Dc Collector Current
2 A
Power Dissipation
1 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
- 2 A
Dc Collector/base Gain Hfe Min
82
Gain Bandwidth Product Ft
18 MHz
Maximum Operating Frequency
18 MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SA1862TLP
2SA1862TLPTR
2SA1862TLPTR
Transistors
High-voltage Switching Transistor
(−400V, −2A)
2SA1862
1) High breakdown voltage. (BV
2) Low saturation voltage.
3) High switching speed, typically tf = 0.4µs at I
4) Wide SOA (safe operating area).
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse, Pw=10ms
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Basic ordering unit (pieces)
Features
Absolute maximum ratings (Ta=25°C)
Packaging specifications and h
Electrical characteristics (Ta=25°C)
(Max. V
Package
Parameter
Code
Type
h
Parameter
CE (sat)
FE
= −0.5V at I
2SA1862
CPT3
2500
Symbol
TL
V
V
V
Tstg
P
P
CBO
CEO
I
Tj
EBO
C
C
Symbol
C
BV
BV
BV
V
V
Cob
I
I
tstg
CE(sat)
BE(sat)
/ I
ton
CBO
EBO
h
f
tf
T
CBO
CEO
EBO
FE
B
CEO
= −500mA / −100mA)
−55 to +150
= −400V)
FE
Limits
−400
−400
−400
−400
150
Min.
−7
−2
−4
10
−7
82
1
−
−
−
−
−
−
−
−
−
Typ.
0.2
1.8
0.4
18
30
−
−
−
−
−
−
−
−
W (Tc=25 °C)
C
A (Pulse)
= −1A.
A (DC)
Max.
−0.5
−1.2
Unit
−10
−10
180
°C
°C
W
V
V
V
−
−
−
−
−
−
−
−
MHz
Unit
µA
µA
pF
µs
µs
µs
∗
V
V
V
V
V
−
I
I
I
V
V
I
I
V
V
V
I
I
V
C
C
E
C
C
C
B1
CB
EB
CE
CB
CE
CC
= −50µA
= −1mA
= −50µA
/I
/I
=−1A, R
=−I
B
B
= −5V
= −400V
= −5V, I
= −10V, I
= −10V, I
= −0.5A/ −0.1A
= −0.5A/ −0.1A
B2
External dimensions (Unit : mm)
− 150V
(1)Base (Gate)
(2)Collector (Drain)
(3)Emitter (Source)
= −0.2A
CPT3
L
=150Ω
C
= −0.1A
E
E
=0.1A, f=5MHz
=0A, f=1MHz
Conditions
0.75
0.9
(1)
2.3
6.5
5.1
Abbreviated symbol : A1862
(2)
(3)
0.65
2.3
Rev.B
2.3
0.5
2SA1862
0.5
1.0
1/2
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2SA1862TLP Summary of contents
Page 1
Transistors High-voltage Switching Transistor (−400V, −2A) 2SA1862 Features = −400V) 1) High breakdown voltage. (BV CEO 2) Low saturation voltage. = −0. −500mA / −100mA) (Max (sat High switching speed, ...
Page 2
Transistors Electrical characteristic curves −0 25°C −0.4 −0.3 −0.2 −0.1 = − 0.5mA −2 −4 −6 −8 −10 0 COLLECTOR TO EMITTER VOLTAGE : V (V) CE Fig.1 Ground emitter output characteristics −10 Ta= 25°C ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...