2N6109G ON Semiconductor, 2N6109G Datasheet - Page 3

• Manufacturer Part Number: 2N6109G
• Description: TRANS PNP PWR GP 7A 50V TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of 2N6109G

• Transistor Type: PNP
• Current - Collector (ic) (max): 7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 3A, 7A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 2.5A, 4V
• Power - Max: 40W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 7 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 7 A
• Dc Collector/base Gain Hfe Min: 30
• Maximum Operating Frequency: 10 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 7 A
• Current, Gain: 2.3
• Frequency: 1 MHz
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.125 °C/W
• Voltage, Breakdown, Collector To Emitter: 50 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 50 V
• Voltage, Collector To Emitter, Saturation: 3.5 V
• Voltage, Emitter To Base: 5 V
• Collector Emitter Voltage V(br)ceo: 50V
• Transition Frequency Typ Ft: 10MHz
• Power Dissipation Pd: 40W
• Dc Collector Current: -7A
• Dc Current Gain Hfe: 10
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N6109GOS

ORDERING INFORMATION
0.15
2N6107
2N6107G
2N6109
2N6109G
2N6111
2N6111G
2N6288
2N6288G
2N6292
2N6292G
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
15
10
0.07
0.05
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
0.07
Figure 5. Active-Region Safe Operating Area
0.1
2.0 3.0
V
CE
Device
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
CURRENT LIMIT
SECONDARY
BREAKDOWN LIMIT
THERMAL LIMIT
@ T
0.2
C
t
t
I
s
r
C
Figure 6. Turn-Off Time
= 25°C (SINGLE PULSE)
0.3
, COLLECTOR CURRENT (AMP)
5.0
PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292
7.0
0.5
10
dc
1.0
20
Device Marking
0.5 ms
30
2N6107
2N6109
2N6288
2N6292
2N6111
2.0
T
V
I
I
C
B1
J
CC
/I
= 25°C
B
= I
= 30 V
= 10
3.0
B2
50 70 100
0.1 ms
5.0 ms
5.0
0.1
ms
7.0
4
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
J(pk)
300
200
100
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
70
50
30
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
(Pb-Free)
(Pb-Free)
(Pb-Free)
(Pb-Free)
(Pb-Free)
Package
0.5
v 150_C. T
1.0
V
J(pk)
R
Figure 7. Capacitance
2.0
, REVERSE VOLTAGE (VOLTS)
may be calculated from the data in
C
3.0
C
ob
ib
5.0
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Shipping
10
J(pk)
T
J
= 150_C; T
= 25°C
20
30
C
- V
C
50
CE
is