MJE13007G ON Semiconductor, MJE13007G Datasheet - Page 2
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MJE13007G
Manufacturer Part Number
MJE13007G
Description
TRANS PWR NPN 8A 400V TO220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Type
Powerr
Specifications of MJE13007G
Transistor Type
NPN
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
400V
Vce Saturation (max) @ Ib, Ic
3V @ 2A, 8A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
5 @ 5A, 5V
Power - Max
80W
Frequency - Transition
14MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
400 V
Emitter- Base Voltage Vebo
9 V
Maximum Dc Collector Current
8 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
8 A
Dc Collector/base Gain Hfe Min
8
Maximum Operating Frequency
14 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
8 A
Current, Gain
30
Frequency
14 MHz
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.56 °C/W
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
9 V
Number Of Elements
1
Collector-emitter Voltage
400V
Emitter-base Voltage
9V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
8
Frequency (max)
14MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJE13007GOS
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS (Note 2)
SECOND BREAKDOWN
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain − Bandwidth Product
Output Capacitance
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
Fall Time
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
C
C
C
C
C
C
C
C
C
C
C
CES
CES
EB
CB
= 10 mA, I
= 2.0 Adc, V
= 5.0 Adc, V
= 2.0 Adc, I
= 5.0 Adc, I
= 8.0 Adc, I
= 5.0 Adc, I
= 2.0 Adc, I
= 5.0 Adc, I
= 5.0 Adc, I
= 500 mAdc, V
= 9.0 Vdc, I
= 10 Vdc, I
= 700 Vdc)
= 700 Vdc, T
B
B
B
B
B
B
B
B
= 0)
CE
CE
E
C
= 0.4 Adc)
= 1.0 Adc)
= 2.0 Adc)
= 1.0 Adc, T
= 0.4 Adc)
= 1.0 Adc)
= 1.0 Adc, T
= 0, f = 0.1 MHz)
CE
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
C
= 125°C)
= 10 Vdc, f = 1.0 MHz)
(V
I
Duty Cycle ≤ 1.0%)
V
V
I
L
B1
B(on)
C
CC
clamp
CC
= 200 mH
= I
Characteristic
= 15 Vdc, I
= 125 Vdc, I
C
C
= 1.0 A, I
B2
= 300 Vdc
= 100°C)
= 100°C)
= 1.0 A, t
(T
B(off)
C
C
C
= 5.0 A
p
= 25°C unless otherwise noted)
= 5.0 A,
= 25 ms,
= 2.5 A
T
T
T
T
T
T
MJE13007
C
C
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
2
V
Symbol
V
V
CEO(sus)
CE(sat)
I
I
BE(sat)
I
h
C
CES
EBO
t
S/b
f
t
t
t
t
−
FE
t
t
sv
T
ob
d
s
c
fi
r
f
Min
400
8.0
5.0
4.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.025
0.23
0.15
0.21
0.04
0.10
Typ
0.5
1.8
1.2
1.6
14
80
−
−
−
−
−
−
−
−
−
−
−
−
−
See Figure 6
See Figure 7
Max
0.30
0.50
0.12
0.20
100
0.1
1.0
1.0
2.0
3.0
3.0
1.2
1.6
1.5
0.1
1.5
3.0
0.7
2.0
3.0
40
30
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
pF
ms
ms
ms
ms
−