MJF122G ON Semiconductor, MJF122G Datasheet

MJF122G

Manufacturer Part Number

MJF122G

Description

TRANS DARL NPN 5A 100V TO220FP

Manufacturer

ON Semiconductor

Datasheet

1.MJF122G.pdf (7 pages)

Specifications of MJF122G

Transistor Type

NPN - Darlington

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

100V

Vce Saturation (max) @ Ib, Ic

3.5V @ 20mA, 5A

Current - Collector Cutoff (max)

10µA

Dc Current Gain (hfe) (min) @ Ic, Vce

2000 @ 3A, 3V

Power - Max

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

NPN

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

100 V

Maximum Dc Collector Current

5 A

Maximum Collector Cut-off Current

10 uA

Power Dissipation

30 W

Maximum Operating Temperature

+ 150 C

Continuous Collector Current

5 A

Dc Collector/base Gain Hfe Min

1000

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Frequency - Transition

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

MJF122GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MJF122G

Manufacturer:

ON/安森美

Quantity:

20 000

Current page: 1 of 7
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Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î Î

Î Î Î Î Î Î Î Î Î Î Î Î

MJF122, MJF127

Complementary Power

Darlingtons

For Isolated Package Applications

applications, where the mounting surface of the device is required to

be electrically isolated from the heatsink or chassis.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Proper strike and creepage distance must be provided.

2. Measurement made with thermocouple contacting the bottom insulated

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

September, 2008 − Rev. 7

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

RMS Isolation Voltage (Note 1)

Collector Current − Continuous

Base Current

Total Power Dissipation (Note 2)

@ T

Derate above 25_C

Total Power Dissipation @ T

Derate above 25_C

Operating and Storage Junction Temperat-

ure Range

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

(Note 2)

Lead Temperature for Soldering Purpose

Designed for general−purpose amplifiers and switching

Electrically Similar to the Popular TIP122 and TIP127

100 V

5.0 A Rated Collector Current

No Isolating Washers Required

Reduced System Cost

High DC Current Gain − 2000 (Min) @ I

UL Recognized, File #E69369, to 3500 V

Pb−Free Packages are Available*

mounting surface (in a location beneath the die), the device mounted on a

heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.

(t = 0.3 sec, R.H. ≤ 30%, T

Per Figure 14

= 25_C

CEO(sus)

Characteristic

Rating

Peak

= 25_C

= 25°C)

Î Î Î

Symbol

ISOL

, T

CEO

RMS

qJA

qJC

= 3 Adc

stg

Î Î Î Î

Isolation

−65 to

Value

0.016

4500

+ 150

0.12

0.24

Max

62.5

100

260

4.1

Î Î Î

W/_C

_C/W

Unit

Vdc

Adc

RMS

*For additional information on our Pb−Free strategy

MJF122

MJF122G

MJF127

MJF127G

†For information on tape and reel specifications,

and soldering details, please download the

ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BASE

COMPLEMENTARY SILICON

Device

POWER DARLINGTONS

ORDERING INFORMATION

COLLECTOR 2

EMITTER 3

5.0 A, 100 V, 30 W

MJF122

CASE 221D−02

NPN

http://onsemi.com

STYLE 2

TO−220

MARKING

DIAGRAM

(Pb−Free)

Package

TO−220

= 2 or 7

= Pb−Free Package

= Assembly Location

= Year

= Work Week

Publication Order Number:

BASE

COLLECTOR 2

EMITTER 3

50 Units / Rail

MJF12xG

MJF127

Shipping

AYWW

PNP

MJF122/D

†

Related parts for MJF122G

MJF122G Summary of contents

Page 1

... Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping MJF122 TO−220 50 Units / Rail MJF122G TO−220 50 Units / Rail (Pb−Free) MJF127 TO−220 50 Units / Rail MJF127G TO−220 50 Units / Rail (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

0.5 0.3 0.2 0.1 SINGLE PULSE R qJC(t) 0. J(pk) 0.03 0.02 0.01 0.1 0.2 0.3 0 ...

Page 4

T = 25°C C 300 Vdc CE 200 Adc C 100 50 30 PNP 20 NPN FREQUENCY (kHz) Figure 6. ...

Page 5

NPN MJF122 25° 250 BE(sat 1 250 CE(sat 0.5 0.1 0.2 ...

Page 6

... Additional tests on slotted 4−40 screws indicate that the screw slot fails between age. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend . ...

Page 7

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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