TIP48G ON Semiconductor, TIP48G Datasheet - Page 4

• Manufacturer Part Number: TIP48G
• Description: TRANS NPN 1A 300V HI PWR TO220AB
• Manufacturer: ON Semiconductor
• Type: High Voltage, Powerr

Specifications of TIP48G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 1A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 300mA, 10V
• Power - Max: 2W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 1 A
• Dc Collector/base Gain Hfe Min: 30
• Maximum Operating Frequency: 10 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 1 A
• Current, Gain: 10
• Frequency: 10 MHz
• Package Type: TO-220
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.125 °C/W
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Base: 400 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TIP48GOS

INPUT
0.05
0.02
5.0
2.0
1.0
0.5
0.2
0.1
0.05
5.0
2.0
1.0
0.5
0.2
0.1
5.0
Note A: Input pulse width is increased until I
Figure 5. Active Region Safe Operating Area
0.02
CURVES APPLY
BELOW RATED V
T
C
≤ 25°C
50
10
V
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
V
CE
50
BB1
0.05
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
MJE171
= 10 V
I
C
20
Figure 6. Turn−Off Time
, COLLECTOR CURRENT (AMPS)
CEO
0.1
V
0
t
t
R
R
s
150 W
100 W
BB2
f
BB1
BB2
=
50
=
=
0.2
dc
V
CE
100
1.0 ms
TIP47
TIP48
TIP50
MONITOR
0.5
TUT
Figure 8. Inductive Load Switching
0.1 W
R
CM
S
T
V
I
C
200
=
J
CC
/I
= 0.63 A.
= 25°C
B
= 200 V
= 5.0
1.0
100 mH
I
100 ms
C
V
500 ms
CC
MONITOR
http://onsemi.com
= 20 V
500
2.0
4
+ 4.5
+ 3.5
+ 2.5
+ 1.5
+ 0.5
- 0.5
- 1.5
- 2.5
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
COLLECTOR
COLLECTOR
0.02
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
0
CURRENT
VOLTAGE
VOLTAGE
INPUT
*APPLIES FOR I
q
q
VB
Figure 7. Temperature Coefficients
VC
V
0.05
0.63 A
CE(sat)
FOR V
J(pk)
V
- 5 V
FOR V
10 V
CER
0 V
0 V
I
C
, COLLECTOR CURRENT (AMPS)
BE
CE(sat)
may be calculated from the data in
0.1
C
/I
B
≤ h
FE
0.2
/5
100 ms
t
(SEE NOTE A)
w
≈ 3 ms
+ 25°C to + 150°C
+ 25°C to + 150°C
J(pk)
0.5
- 55°C to + 25°C
- 55°C to + 25°C
= 150_C; T
1.0
C
− V
2.0
J(pk)
C
CE
is