2N5194G ON Semiconductor, 2N5194G Datasheet - Page 3

• Manufacturer Part Number: 2N5194G
• Description: TRANS PNP PWR GP 4A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of 2N5194G

• Transistor Type: PNP
• Current - Collector (ic) (max): 4A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.4V @ 1A, 4A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 1.5A, 2V
• Power - Max: 40W
• Frequency - Transition: 2MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Collector: 4 A
• Current, Gain: 10
• Frequency: 2 MHz
• Package Type: TO-225AA
• Polarity: PNP
• Power Dissipation: 40 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.12 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 1.4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5194GOS

H
Q
U
1
−B−
2
3
D
G
S
2 PL
0.25 (0.010)
V
−A−
K
F
0.25 (0.010)
M
M
A
M
M
A
B
J
M
PACKAGE DIMENSIONS
M
R
C
B
2N5194, 2N5195
M
CASE 77−09
ISSUE Z
TO−225
6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077−09.
STYLE 1:
DIM
A
B
C
D
G
H
K
M
Q
R
U
F
J
S
V
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.115
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
MIN
0.094 BSC
5 TYP
INCHES
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
−−−
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
16.63
MAX
11.04
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
−−−