TIP41CG ON Semiconductor, TIP41CG Datasheet - Page 5
TIP41CG
Manufacturer Part Number
TIP41CG
Description
TRANS NPN 6A 100V HI PWR TO220AB
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of TIP41CG
Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 600mA, 6A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
15 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
6 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
6 A
Dc Collector/base Gain Hfe Min
30
Maximum Operating Frequency
3 MHz
Minimum Operating Temperature
- 65 C
Current, Collector
6 A
Current, Gain
75
Frequency
3 MHz
Package Type
TO-220AB
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
1.67 °C/W
Voltage, Breakdown, Collector To Emitter
100 V
Voltage, Collector To Base
100 V
Voltage, Collector To Emitter
100 V
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
100V
Collector-base Voltage
100V
Emitter-base Voltage
5V
Collector Current (dc) (max)
6A
Dc Current Gain (min)
30
Frequency (max)
3MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP41CGOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TIP41CG
Manufacturer:
ON Semiconductor
Quantity:
14
Part Number:
TIP41CG
Manufacturer:
ON/安森美
Quantity:
20 000
10
10
10
500
300
200
100
10
10
10
10
7.0
5.0
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
-1
-2
-3
0
3
2
1
0
- 0.3
0.06
0.06
TIP41, TIP41A, TIP41B, TIP41C (NPN); TIP42, TIP42A, TIP42B, TIP42C (PNP)
- 0.2 - 0.1
T
V
T
REVERSE
J
0.1
CE
0.1
J
= 150°C
= 25°C
T
Figure 12. Collector Cut-Off Region
= 30 V
- 55°C
J
25°C
= 150°C
V
V
V
BE(sat)
CE(sat)
V
BE
BE
Figure 8. DC Current Gain
0.2
0.2 0.3 0.4
Figure 10. “On” Voltages
I
I
, BASE-EMITTER VOLTAGE (VOLTS)
C
C
@ V
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
0
@ I
@ I
0.3
CE
C
C
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
/I
/I
100°C
I
B
= 4.0 V
B
C
0.4
= 10
= 10
= I
CES
0.6
0.6
FORWARD
1.0
1.0
25°C
V
CE
2.0 3.0 4.0
2.0
= 2.0 V
http://onsemi.com
4.0
+ 0.7
6.0
6.0
5
1.0 M
100 k
10 M
1.0 k
0.1 k
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
10 k
2.0
1.6
1.2
0.8
0.4
0
0
0.06
20
10
Figure 13. Effects of Base-Emitter Resistance
*APPLIES FOR I
* q
q
I
0.1
C
OBTAINED FROM FIGURE 12)
VB
I
C
Figure 9. Collector Saturation Region
VC
≈ I
40
Figure 11. Temperature Coefficients
20 30
= 1.0 A
FOR V
(TYPICAL I
FOR V
CES
I
C
T
BE
0.2 0.3
I
= 2 x I
J
C
CE(sat)
, JUNCTION TEMPERATURE (°C)
60
, COLLECTOR CURRENT (AMP)
CES
I
C
B
50
/I
CES
, BASE CURRENT (mA)
B
VALUES
≤ h
80
FE
2.5 A
0.5
/4
I
C
100
+ 25°C to + 150°C
+ 25°C to + 150°C
= 10 x I
- 55°C to + 25°C
- 55°C to + 25°C
100
1.0
CES
200
120
300
5.0 A
2.0 3.0 4.0
V
T
CE
J
500
= 25°C
140
= 30 V
1000
160
6.0