MJE181G ON Semiconductor, MJE181G Datasheet - Page 4

• Manufacturer Part Number: MJE181G
• Description: TRANS POWER NPN 3A 60V TO225AA
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE181G

• Transistor Type: NPN
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 600mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 100mA, 1V
• Power - Max: 12.5W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Current, Collector: 3 A
• Current, Gain: 12
• Frequency: 50 MHz
• Package Type: TO-225AA
• Polarity: NPN
• Power Dissipation: 1.5 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 10 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 1.7 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: MJE181GOS

H
Q
U
1
−B−
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
2
3
D
G
S
2 PL
0.25 (0.010)
V
−A−
K
F
M
A
M
0.25 (0.010)
B
M
M
PACKAGE DIMENSIONS
M
A
CASE 77−09
J
M
TO−225
ISSUE Z
R
C
B
6
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077−09.
STYLE 1:
DIM
A
B
C
D
G
H
K
M
Q
R
S
U
V
F
J
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
0.115
MIN
0.094 BSC
5 TYP
INCHES
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
−−−
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
11.04
16.63
MAX
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
−−−