MJE700G ON Semiconductor, MJE700G Datasheet - Page 4
MJE700G
Manufacturer Part Number
MJE700G
Description
TRANS DARL PNP 4A 60V TO225AA
Manufacturer
ON Semiconductor
Type
Power, Switchr
Specifications of MJE700G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
750 @ 1.5A, 3V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
5 V
Collector- Base Voltage Vcbo
60 V
Maximum Dc Collector Current
4 A
Maximum Collector Cut-off Current
100 uA
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Current, Gain
100
Current, Input
0.1 ADC
Current, Output
4 ADC
Package Type
TO-225
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Input
5 V
Voltage, Output
60 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MJE700GOS
H
Q
U
1
−B−
2
3
D
G
S
2 PL
V
0.25 (0.010)
−A−
K
F
M
A
M
0.25 (0.010)
B
M
M
PACKAGE DIMENSIONS
M
A
CASE 77−09
J
ISSUE Z
M
TO−225
R
C
B
6
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077-09.
STYLE 1:
DIM
G
M
Q
A
B
C
D
F
H
J
K
R
S
U
V
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.115
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
MIN
0.094 BSC
INCHES
5 TYP
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
---
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
16.63
MAX
11.04
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
---