TIP32BG ON Semiconductor, TIP32BG Datasheet - Page 5
TIP32BG
Manufacturer Part Number
TIP32BG
Description
TRANS PNP 3A 80V HI PWR TO220AB
Manufacturer
ON Semiconductor
Type
Powerr
Specifications of TIP32BG
Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1.2V @ 375mA, 3A
Current - Collector Cutoff (max)
300µA
Dc Current Gain (hfe) (min) @ Ic, Vce
10 @ 3A, 4V
Power - Max
2W
Frequency - Transition
3MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Collector
3 A
Current, Gain
50
Frequency
3 MHz
Package Type
TO-220AB
Polarity
PNP
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.125 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
1.2 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TIP32BGOS
10
10
10
500
300
100
10
10
10
10
7.0
5.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.003
70
50
30
10
-1
-2
-3
- 0.4
0
3
2
1
0
0.03
0.005 0.01 0.02 0.03 0.05
T
- 0.3 - 0.2 - 0.1
V
J
0.05 0.07
CE
= 25°C
T
T
J
REVERSE
Figure 12. Collector Cut−Off Region
J
V
V
= 30 V
= 150°C
V
- 55°C
= 150°C
CE(sat)
25°C
BE
BE(sat)
100°C
I
25°C
I
C
, BASE−EMITTER VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
0.1
Figure 10. “On” Voltages
@ I
@ I
C
C
/I
/I
B
B
= 10
= 10
0
V
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
BE
0.3
0.1
@ V
CE
0.2 0.3 0.5
0.5
I
CES
= 2.0 V
0.7 1.0
FORWARD
V
CE
1.0
= 2.0 V
http://onsemi.com
2.0 3.0
3.0
5
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
- 1.5
- 2.0
- 2.5
- 0.5
- 1.0
10
10
10
10
10
10
2.0
1.6
1.2
0.8
0.4
0.003 0.005 0.01 0.02
0
0
7
6
5
4
3
2
1.0
20
Figure 13. Effects of Base−Emitter Resistance
I
C
*APPLIES FOR I
2.0
I
C
≈ I
Figure 9. Collector Saturation Region
T
40
= 0.3 A
Figure 11. Temperature Coefficients
J
CES
= - 65°C TO + 150°C
T
I
I
C
C
J
5.0
, JUNCTION TEMPERATURE (°C)
= 2 x I
, COLLECTOR CURRENT (AMP)
60
I
*q
OBTAINED FROM FIGURE 12)
B
, BASE CURRENT (mA)
VC
q
CES
10
C
VB
(TYPICAL I
/I
FOR V
B
1.0 A
FOR V
≤ h
0.05
I
C
80
20
FE
= 10 x I
CE(sat)
/2
BE
0.1
CES
100
CES
VALUES
50
0.2 0.3 0.5
100 200
120
3.0 A
T
V
J
CE
= 25°C
1.0
140
= 30 V
500
2.0 3.0
1000
160