BF720T1G ON Semiconductor, BF720T1G Datasheet
BF720T1G
Manufacturer Part Number
BF720T1G
Description
TRANS NPN 100MA 300V SOT223
Manufacturer
ON Semiconductor
Datasheet
1.BF720T1G.pdf
(4 pages)
Specifications of BF720T1G
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 30mA
Dc Current Gain (hfe) (min) @ Ic, Vce
50 @ 25mA, 20V
Power - Max
1.5W
Frequency - Transition
60MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
300V
Collector-base Voltage
300V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
50
Power Dissipation
1.5W
Frequency (max)
60MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Package Type
SOT-223
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
BF720T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BF720T1G
Manufacturer:
ON
Quantity:
30 000
BF720T1G, BF720T3G
NPN Silicon Transistor
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x
Semiconductor Components Industries, LLC, 2010
September, 2010 - - Rev. 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector -- Emitter Voltage
Collector -- Base Voltage
Collector -- Emitter Voltage
Emitter -- Base Voltage
Collector Current
Total Power Dissipation up to T
Storage Temperature Range
Junction Temperature
Thermal Resistance,
Compliant
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
0.059 in.; mounting pad for the collector lead min. 0.93 in
Junction--to--Ambient (Note 1)
Characteristic
Rating
A
= 25C
Symbol
Symbol
V
V
V
V
R
T
P
CEO
CBO
CER
EBO
T
I
θJA
stg
C
D
J
--65 to +150
2
.
Value
Max
83.3
300
300
300
100
150
5.0
1.5
1
mAdc
C/W
Unit
Unit
Vdc
Vdc
Vdc
Vdc
C
W
C
†For information on tape and reel specifications,
BF720T1G
BF720T3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
NPN SILICON TRANSISTOR
1
SOT- -223 (TO- -261)
(Note: Microdot may be in either location)
CASE 318E
STYLE 1
ORDERING INFORMATION
SURFACE MOUNT
A
Y
W
DC = Device Code
G
BASE
http://onsemi.com
1
= Assembly Location
= Year
= Work Week
= Pb--Free Package
COLLECTOR 2,4
Package
(Pb--Free)
SOT--223
(Pb--Free)
SOT--223
EMITTER 3
Publication Order Number:
1000 / Tape & Reel
4000 / Tape & Reel
1
MARKING
DIAGRAM
Shipping
AYW
DC G
BF720T1/D
G
†
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BF720T1G Summary of contents
Page 1
... BF720T1G, BF720T3G NPN Silicon Transistor Features These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector -- Emitter Voltage Collector -- Base Voltage Collector -- Emitter Voltage Emitter -- Base Voltage Collector Current Total Power Dissipation 25C A Storage Temperature Range ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (I = 1.0 mAdc Collector-Base Breakdown Voltage (I = 100 mAdc Collector-Emitter Breakdown Voltage (I = 100 mAdc 2.7 kΩ) ...
Page 3
T = +125C J 100 80 25 --55 0.1 100 C @ 1MHz 1MHz cb 0.1 0.1 1 REVERSE VOLTAGE (VOLTS) R Figure 2. Capacitance 1.4 1.2 ...
Page 4
... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...