2SC58630QL Panasonic - SSG, 2SC58630QL Datasheet
2SC58630QL
Manufacturer Part Number
2SC58630QL
Description
TRANS NPN 300VCEO 70MA MINI-3
Manufacturer
Panasonic - SSG
Datasheet
1.2SC58630QL.pdf
(3 pages)
Specifications of 2SC58630QL
Transistor Type
NPN
Current - Collector (ic) (max)
70mA
Voltage - Collector Emitter Breakdown (max)
300V
Vce Saturation (max) @ Ib, Ic
1.2V @ 5mA, 50mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 10V
Power - Max
200mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
Mini3-G1 (SC-59)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SC58630QLTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SC58630QL
Manufacturer:
ROHM
Quantity:
63
Part Number:
2SC58630QL
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SC5863
Silicon NPN epitaxial planar type
For general amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
• High collector-emitter voltage (Base open) V
• High transition frequency f
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
60 to 150
*
Q
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
CEO
EBO
a
CP
100 to 220
I
stg
C
CE(sat)
C
C
h
j
CEO
f
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +150
CEO
Rating
I
I
V
V
I
V
V
C
E
C
300
300
100
200
150
CE
CE
CB
CB
70
= 1 µA, I
= 100 µA, I
= 50 mA, I
7
SJC00290AED
= 120 V, I
= 10 V, I
= 10 V, I
= 10 V, I
C
Conditions
Unit
= 0
B
mW
C
E
E
mA
mA
B
°C
°C
V
V
V
B
= 5 mA
= 5 mA
= 0, f = 1 MHz
= −10 mA, f = 200 MHz
= 0
= 0
Marking Symbol: 7H
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
Min
300
0.40
3
60
50
7
2
+0.10
–0.05
Typ
80
Mini3-G1 Package
Max
220
1.2
10
1
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
MHz
Unit
µA
pF
V
V
V
1
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