NJT4030PT3G ON Semiconductor, NJT4030PT3G Datasheet

TRANS PNP BIPO 3A 40V SOT-223

NJT4030PT3G

Manufacturer Part Number
NJT4030PT3G
Description
TRANS PNP BIPO 3A 40V SOT-223
Manufacturer
ON Semiconductor
Datasheet

Specifications of NJT4030PT3G

Transistor Type
PNP
Current - Collector (ic) (max)
3A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
500mV @ 300mA, 3A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1A, 1V
Power - Max
2W
Frequency - Transition
160MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
NJT4030PT3GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NJT4030PT3G
Manufacturer:
ON
Quantity:
4 000
Part Number:
NJT4030PT3G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NJT4030PT3G
Manufacturer:
ON/安森美
Quantity:
20 000
NJT4030P
Bipolar Power Transistors
PNP Silicon
Features
 Semiconductor Components Industries, LLC, 2010
September, 2010 - - Rev. 1
Compliant
Collector - -Emitter Sustaining Voltage - -
High DC Current Gain - -
Low Collector - -Emitter Saturation Voltage - -
SOT- -223 Surface Mount Packaging
Epoxy Meets UL 94, V- -0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
V
h
V
FE
CEO(sus)
CE(sat)
Machine Model, C; > 400 V
= 200 (Min) @ I
= 100 (Min) @ I
= 0.200 Vdc (Max) @ I
= 0.500 Vdc (Max) @ I
= 40 Vdc (Min) @ I
C
C
= 1.0 Adc
= 3.0 Adc
C
= 10 mAdc
C
C
= 1.0 Adc
= 3.0 Adc
1
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
40 VOLTS, 2.0 WATTS
A
Y
W
4030P
G
ORDERING INFORMATION
PNP TRANSISTOR
3.0 AMPERES
http://onsemi.com
PIN ASSIGNMENT
CASE 318E
Top View Pinout
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb--Free Package
SOT- -223
STYLE 1
B 1
Schematic
B
1
C
C
Publication Order Number:
4
C 2,4
2
E 3
E
3
1
MARKING
DIAGRAM
4030PG
NJT4030P/D
AYW

Related parts for NJT4030PT3G

NJT4030PT3G Summary of contents

Page 1

NJT4030P Bipolar Power Transistors PNP Silicon Features  Collector - -Emitter Sustaining Voltage - - Vdc (Min CEO(sus)  High DC Current Gain - - h = 200 (Min 100 ...

Page 2

... Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 5 seconds ORDERING INFORMATION Device NJT4030PT1G NJT4030PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Package ...

Page 3

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector--Emitter Sustaining Voltage ( mAdc Adc Emitter--Base Voltage ( mAdc Adc Collector Cutoff Current ( Vdc) CB Emitter Cutoff ...

Page 4

T C 1 100 T , TEMPERATURE (C) J Figure 1. Power Derating http://onsemi.com 4 125 150 ...

Page 5

I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 0.01 0.001 0.001 0.01 0 COLLECTOR ...

Page 6

1.1 1.0 0.9 --40C 0.8 0.7 25C 0.6 0.5 0.4 150C 0.3 0.2 0.1 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base- -Emitter Saturation Voltage 350 300 ...

Page 7

... A1 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

Related keywords