MPSA42G ON Semiconductor, MPSA42G Datasheet - Page 2

• Manufacturer Part Number: MPSA42G
• Description: TRANS NPN GP SS 500MA 300V TO92
• Manufacturer: ON Semiconductor
• Type: High Voltager

Specifications of MPSA42G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 25 @ 1mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.5 A
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 50 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 1 mA at 10 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 500 mA
• Current, Gain: 40
• Frequency: 50 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Base: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 6 V
• Number Of Elements: 1
• Collector-emitter Voltage: 300V
• Collector-base Voltage: 300V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 25
• Frequency (max): 50MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSA42GOS

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Collector−Base Capacitance
(I
(I
(I
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
CB
EB
EB
CB
= 100 mAdc, I
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 20 mAdc, I
= 20 mAdc, I
= 10 mAdc, V
= 200 Vdc, I
= 160 Vdc, I
= 6.0 Vdc, I
= 4.0 Vdc, I
= 20 Vdc, I
B
B
E
C
B
E
C
C
CE
CE
CE
E
E
CE
= 2.0 mAdc)
= 2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc)
= 20 Vdc, f = 100 MHz)
= 10 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
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MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
CBO
EBO
C
f
FE
T
cb
Min
300
200
300
200
6.0
25
40
40
50
−
−
−
−
−
−
−
−
−
Max
0.1
0.1
0.1
0.1
0.5
0.4
0.9
3.0
4.0
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−