MPS651G ON Semiconductor, MPS651G Datasheet - Page 3

• Manufacturer Part Number: MPS651G
• Description: TRANS AMP NPN GP 2A 60V TO-92
• Manufacturer: ON Semiconductor
• Type: Amplifierr

Specifications of MPS651G

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 75 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75 at 50 mA at 2 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 2 A
• Current, Gain: 40
• Frequency: 75 MHz
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 75
• Frequency (max): 75MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPS651G; MPS651GOS

0.05
0.02
0.01
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
4.0
2.0
1.0
0.5
0.2
0.1
10
0
0
0.05
1.0
50
0.1 0.2
I
C
T
A
= 10 mA I
2.0
= 25°C
V
CE
Figure 7. MPS650, MPS651 SOA,
100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 5. MPS650, MPS651
Figure 3. MPS650, MPS651
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.5 1.0 2.0
I
C
, COLLECTOR CURRENT (mA)
C
Safe Operating Area
= 100 mA
I
B
200
5.0
, BASE CURRENT (mA)
On Voltages
V
NPN − MPS650, MPS651; PNP − MPS750, MPS751
BE(on)
V
NPN
NPN
NPN
BE(sat)
10
MPS65
I
MPS65
C
5.0 10 20
V
@ V
500
CE(sat)
= 500 mA
0
1
@ I
CE
T
C
1.0 ms
= 2.0 V
C
/I
@ I
20
B
= 25°C
1.0 A
= 10
C
/I
B
= 10
T
50 100 200 500
I
J
C
= 25°C
= 2.0 A
2.0 A
50
100 ms
http://onsemi.com
4.0 A
100
3
−0.05
−0.02
−0.01
−2.0
−1.8
−1.6
−1.4
−1.2
−1.0
−0.8
−0.6
−0.4
−0.2
−4.0
−2.0
−1.0
−0.5
−0.2
−0.1
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−10
0
0
−0.05
−1.0
−50
−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
I
T
C
A
−2.0
= −10 mA
= 25°C
V
Figure 8. MPS750, MPS751 SOA,
CE
−100
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Collector Saturation Region
Figure 4. MPS750, MPS751
Figure 6. MPS750, MPS751
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
I
C
, COLLECTOR CURRENT (mA)
Safe Operating Area
I
−5.0
−200
B
, BASE CURRENT (mA)
I
C
On Voltages
= −100 mA
V
CE(sat)
PNP
PNP
PNP
−10
MPS75
V
MPS75
BE(sat)
0
−500
1
I
V
C
@ I
BE(on)
= −500 mA
1.0 ms
@ I
C
T
−20
C
/I
B
= 25°C
C
@ V
−1.0 A
= 10
/I
B
= 10
CE
−50 −100 −200 −500
= 2.0 V
−2.0 A
100 ms
T
−50
J
I
C
= 25°C
= −2.0 A
−4.0 A
−100