MPSA29G ON Semiconductor, MPSA29G Datasheet - Page 2

• Manufacturer Part Number: MPSA29G
• Description: TRANS NPN DARL BIPO 100V TO-92
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MPSA29G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 100 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Current, Gain: 10000
• Current, Output: 500 mA
• Package Type: TO-92
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 200
• Voltage, Collector To Emitter, Saturation: 0.8 V
• Voltage, Input: 12 V
• Voltage, Output: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MPSA29G; MPSA29GOS

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL- -SIGNAL CHARACTERISTICS
Collector--Emitter Breakdown Voltage
Collector--Base Breakdown Voltage
Emitter--Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
(V
(V
Emitter Cutoff Current
DC Current Gain
Collector--Emitter Saturation Voltage
Base--Emitter On Voltage
Current--Gain -- Bandwidth Product (Note 2)
Output Capacitance
CE
CE
T
= h
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
= 60 Vdc, V
= 80 Vdc, V
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
fe
= 10 mAdc, I
= 100 mAdc, V
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
S f
= 10 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 10 Vdc, I
test
.
BE
BE
= 0)
= 0)
C
B
E
E
C
E
E
CE
CE
= 0)
B
BE
= 0.01 mAdc)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
= 0)
= 0.1 mAdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSA28
MPSA29
MPSA28
MPSA29
MPSA28
MPSA29
MPSA28
MPSA29
2
V
V
V
Symbol
V
V
(BR)CES
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
I
BE(on)
h
CBO
CES
EBO
fT
FE
10,000
10,000
Min
100
100
125
80
80
12
--
--
--
--
--
--
--
--
--
Typ
200
0.7
0.8
1.4
5.0
--
--
--
--
--
--
--
--
--
--
--
--
Max
100
100
500
500
100
1.2
1.5
2.0
8.0
--
--
--
--
--
--
--
--
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
--