2N5401G ON Semiconductor, 2N5401G Datasheet - Page 3

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2N5401G

Manufacturer Part Number
2N5401G
Description
TRANS SS PNP 150V 600MA TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Datasheets

Specifications of 2N5401G

Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
50
Frequency
300 MHz
Package Type
TO-92
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N5401G
2N5401GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N5401G
Manufacturer:
ONSemiconduc
Quantity:
5 630
Part Number:
2N5401G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
2N5401G
Quantity:
290
150
100
200
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
70
50
30
20
0
0.005
0.1
0.01
0.2
I
0.02
C
T
−55°C
0.3
J
= 1.0 mA
= 125°C
25°C
0.5
0.05
10
10
10
10
10
10
10
−1
−2
−3
3
2
1
0
0.3
Figure 2. Collector Saturation Region
T
V
Figure 3. Collector Cut−Off Region
0.1
J
1.0
REVERSE
CE
0.2
= 125°C
= 30 V
Figure 1. DC Current Gain
75°C
25°C
0.1
10 mA
V
BE
I
0.2
http://onsemi.com
C
, BASE−EMITTER VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
I
0
B
2.0
, BASE CURRENT (mA)
2N5401
I
0.1
C
3
= I
FORWARD
3.0
CES
0.5
0.2
30 mA
0.3
1.0
5.0
0.4
2.0
0.5
10
0.6
100 mA
0.7
5.0
V
V
20
CE
CE
= − 1.0 V
= − 5.0 V
30
10
50
20
100
50

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