2N5401G ON Semiconductor, 2N5401G Datasheet - Page 2
2N5401G
Manufacturer Part Number
2N5401G
Description
TRANS SS PNP 150V 600MA TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of 2N5401G
Transistor Type
PNP
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
150V
Vce Saturation (max) @ Ib, Ic
500mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
150 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
50 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
50
Frequency
300 MHz
Package Type
TO-92
Polarity
PNP
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
150 V
Voltage, Collector To Base
160 V
Voltage, Collector To Emitter
150 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N5401G
2N5401GOS
2N5401GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5401G
Manufacturer:
ONSemiconduc
Quantity:
5 630
Part Number:
2N5401G
Manufacturer:
ON/安森美
Quantity:
20 000
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Small−Signal Current Gain
Noise Figure
2N5401G
2N5401RLRAG
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(I
(I
C
C
E
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
CB
= 1.0 mAdc, I
= 100 mAdc, I
= 10 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 1.0 mAdc, V
= 250 mAdc, V
= 3.0 Vdc, I
= 120 Vdc, I
= 120 Vdc, I
= 10 Vdc, I
Device
C
B
B
B
B
E
B
E
C
CE
CE
CE
= 0)
E
E
CE
CE
CE
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0, T
= 5.0 Vdc)
= 5.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
A
Characteristic
= 100°C)
(T
S
A
= 1.0 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
2N5401
(Pb−Free)
(Pb−Free)
Package
TO−92
TO−92
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
I
h
CBO
EBO
NF
h
f
obo
FE
T
fe
2000 Tape & Reel
5000 Unit / Bulk
Min
150
160
100
5.0
50
60
50
40
Shipping
−
−
−
−
−
−
−
−
−
†
Max
240
300
200
0.2
0.5
1.0
1.0
6.0
8.0
50
50
50
−
−
−
−
−
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−