2N5551G ON Semiconductor, 2N5551G Datasheet - Page 2
2N5551G
Manufacturer Part Number
2N5551G
Description
TRANS NPN SS GP 0.6A 160V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of 2N5551G
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
160V
Vce Saturation (max) @ Ib, Ic
200mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625mW
Frequency - Transition
300MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
160 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
80 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
30
Frequency
300 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
160 V
Voltage, Collector To Base
180 V
Voltage, Collector To Emitter
160 V
Voltage, Collector To Emitter, Saturation
0.2 V
Voltage, Emitter To Base
6 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N5551G
2N5551GOS
2N5551GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N5551G
Manufacturer:
ON Semiconductor
Quantity:
1 550
Part Number:
2N5551G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N5551G-B-AB3-R
Manufacturer:
UTC原装
Quantity:
20 000
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
(I
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Input Capacitance
Small−Signal Current Gain
Noise Figure
E
= 10 mAdc, I
(I
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
(I
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
CB
EB
CB
EB
= 1.0 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 1.0 mAdc, V
= 250 mAdc, V
= 100 Vdc, I
= 120 Vdc, I
= 100 Vdc, I
= 120 Vdc, I
= 4.0 Vdc, I
= 10 Vdc, I
= 0.5 Vdc, I
C
= 0)
B
B
B
B
E
B
E
C
CE
CE
CE
C
E
E
E
E
CE
CE
CE
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0 )
= 0)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0, T
= 0, T
= 5.0 Vdc)
= 5.0 Vdc)
= 10 Vdc, f = 100 MHz)
= 5.0 Vdc)
= 10 Vdc, f = 1.0 kHz)
= 5.0 Vdc, R
A
A
= 100°C)
= 100°C)
Characteristic
S
= 1.0 kW, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
2N5550, 2N5551
http://onsemi.com
2
Both Types
Both Types
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
C
h
CBO
EBO
NF
h
f
obo
FE
ibo
T
fe
Min
140
160
160
180
100
6.0
60
80
60
80
20
30
50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
0.15
0.25
0.20
100
100
250
250
300
200
1.0
1.2
1.0
6.0
8.0
50
50
50
30
20
10
−
−
−
−
−
−
−
−
−
nAdc
mAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
dB
pF
pF
−
−