MPS8099G ON Semiconductor, MPS8099G Datasheet - Page 4
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MPS8099G
Manufacturer Part Number
MPS8099G
Description
TRANSISTOR NPN GP BIPO 80V TO-92
Manufacturer
ON Semiconductor
Type
Amplifierr
Specifications of MPS8099G
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Power - Max
625mW
Frequency - Transition
150MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
80 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
0.5 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
625 mW
Maximum Operating Frequency
150 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100 at 1 mA at 5 V
Minimum Operating Temperature
- 55 C
Current, Collector
500 mA
Current, Gain
75
Frequency
150 MHz
Package Type
TO-92
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/W
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
0.4 V
Voltage, Emitter To Base
5 V
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
500mA
Dc Current Gain (min)
100
Frequency (max)
150MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MPS8099G
MPS8099GOS
MPS8099GOS
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MPS8099G
Manufacturer:
ON/安森美
Quantity:
20 000
1.0 k
700
500
300
200
100
300
200
100
8.0
6.0
4.0
2.0
70
50
30
40
20
10
70
50
30
20
10
0.1
10
1.0
V
I
I
T
C
B1
Figure 3. Current−Gain − Bandwidth Product
J
t
CC
/I
d
T
= 25°C
B
= I
@ V
0.2
J
= 40 V
= 10
= 25°C
B2
2.0
BE(off)
20
0.5
3.0
= 0.5 V
Figure 7. Switching Times
V
I
I
C
C
R
Figure 5. Capacitance
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
1.0
5.0 7.0 10
30
2.0
NPN
50
C
ibo
5.0
V
70
20
C
CE
10
obo
= 1.0 V
30
100
20
T
J
5.0 V
t
50 70
t
t
s
= 25°C
f
r
http://onsemi.com
50
200
100
100
4
1.0 k
700
500
300
200
100
300
200
100
8.0
6.0
4.0
2.0
70
50
30
20
10
70
50
30
40
20
10
-1.0
-0.1
-10
t
Figure 4. Current−Gain − Bandwidth Product
d
-0.2
T
@ V
J
= 25°C
-2.0 -3.0
BE(off)
-20
-0.5
= -0.5 V
Figure 8. Switching Times
V
I
I
C
C
R
Figure 6. Capacitance
t
t
t
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
r
, REVERSE VOLTAGE (VOLTS)
s
f
-1.0
-5.0 -7.0
-30
-2.0
PNP
-10
-50
C
-5.0
ibo
C
V
obo
CE
-20 -30
-70
= -1.0 V
-10 -20
-100
-5.0 V
V
I
I
T
T
C
B1
T
J
CC
-50 -70
J
/I
J
= 25°C
B
= 25°C
= I
= 25°C
= -40 V
= 10
-50
B2
-200
-100
-100