MPS2907AG ON Semiconductor, MPS2907AG Datasheet - Page 3

• Manufacturer Part Number: MPS2907AG
• Description: TRANSISTOR PNP GP SS 60V TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MPS2907AG

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: - 600 A
• Maximum Dc Collector Current: 0.6 A
• Power Dissipation: 1.5 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 100
• Minimum Operating Temperature: - 55 C
• Current, Collector: -600 mA
• Current, Gain: 50
• Frequency: 200 MHz
• Package Type: TO-92
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: -60 V
• Voltage, Collector To Base: -60 V
• Voltage, Collector To Emitter: -60 V
• Voltage, Collector To Emitter, Saturation: -1.6 V
• Voltage, Emitter To Base: -5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPS2907AG; MPS2907AGOS

0
-16 V
-1.0
-0.8
-0.6
-0.4
-0.2
3.0
2.0
1.0
0.7
0.5
0.3
0.2
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit
-0.005
o
-0.1
0
= 50 W
200 ns
-0.01
I
C
-0.2 -0.3
= -1.0 mA
V
V
CE
CE
= -1.0 V
= -10 V
-0.02 -0.03 -0.05 -0.07 -0.1
50
1.0 k
-0.5 -0.7 -1.0
-30 V
200
-10 mA
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
Figure 4. Collector Saturation Region
TYPICAL CHARACTERISTICS
-2.0 -3.0
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
-0.2 -0.3
I
http://onsemi.com
B
, BASE CURRENT (mA)
-5.0 -7.0 -10
3
-0.5 -0.7 -1.0
0
-30 V
-100 mA
Figure 2. Storage and Fall Time Test Circuit
INPUT
Z
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
T
o
J
200 ns
= 50 W
= 125°C
-20
-2.0
25°C
-30
-3.0
50
-50 -70 -100
1.0 k
- 55°C
-5.0 -7.0 -10
+15 V
1.0 k
1N916
-6.0 V
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
-500 mA
-200 -300
-20 -30
-500
-50