MMBT4126-7 Diodes Zetex, MMBT4126-7 Datasheet
MMBT4126-7
Manufacturer Part Number
MMBT4126-7
Description
TRANS PNP -25V 300MW SMD SOT23-3
Manufacturer
Diodes Zetex
Datasheet
1.MMBT4126-7.pdf
(3 pages)
Specifications of MMBT4126-7
Transistor Type
PNP
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
25V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 2mA, 1V
Power - Max
300mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
MMBT4126DITR
MMBT4126TR
MMBT4126TR
MMBT4126TR
MMBT4126TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT4126-7-F
Manufacturer:
Diodes Inc
Quantity:
102 913
Mechanical Data
Electrical Characteristics
Features
Maximum Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Noise Figure
•
•
•
•
•
•
•
•
•
•
•
•
•
Notes:
DS30106 Rev. 8 - 2
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT4124)
Ideal for Low Power Amplification and Switching
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2 and 4)
Case: SOT-23
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy
42 leadframe).
Marking (See Page 3): K2B
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
www.diodes.com
E
B
V
V
V
Symbol
V
V
B
(BR)CBO
(BR)CEO
(BR)EBO
TOP VIEW
CE(SAT)
BE(SAT)
I
C
I
C
h
CBO
EBO
NF
1 of 3
h
f
obo
FE
ibo
T
fe
C
G
H
C
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
D
T
Symbol
A
E
J
V
V
V
R
, T
E
P
CBO
CEO
EBO
I
θ JA
C
Please click here to visit our online spice models database.
J
D
Min
-4.0
120
120
250
-25
-25
STG
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
B C
K
L
-0.40
-0.95
2
Max
360
480
O
-50
-50
4.5
4.0
10
⎯
⎯
⎯
⎯
⎯
3
Fire Retardants.
M
MHz
Unit
-55 to +150
nA
nA
dB
pF
pF
⎯
⎯
V
V
V
V
V
Value
-200
-4.0
300
417
-25
-25
I
I
I
V
V
I
I
I
I
V
V
V
f = 1.0kHz
V
f = 100MHz
V
R
C
C
E
C
C
C
C
CB
EB
CB
EB
CE
CE
CE
S
= -10μA, I
= -10μA, I
= -1.0mA, I
= -2.0mA, V
= -50mA, V
= -50mA, I
= -50mA, I
= 1.0kΩ, f = 1.0kHz
= -20V, I
= -3.0V, I
= 1.0V, I
= -5.0V, I
= -5.0V, f = 1.0MHz, I
= -0.5V, f = 1.0MHz, I
= -20V, I
MMBT4126
Dim
All Dimensions in mm
G
M
A
B
C
D
E
H
K
L
α
J
Test Condition
E
C
C
E
B
B
C
B
C
C
CE
= 0
= 0
CE
= -2.0mA,
= 0V
= -5.0mA
= -5.0mA
= -10mA,
SOT-23
= 0
= 0V
= -100μA,
0.013
0.903
0.085
= -1.0V
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.45
Min
= -1.0V
0°
© Diodes Incorporated
°C/W
Unit
mW
mA
°C
V
V
V
E
C
0.180
MMBT4126
Max
0.51
1.40
2.50
1.03
0.60
2.05
3.00
0.10
1.10
0.61
= 0
= 0
8°
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MMBT4126-7 Summary of contents
Page 1
... B 4 -5.0V 1.0MHz -0.5V 1.0MHz 1.0V -2.0mA, ⎯ 480 f = 1.0kHz V = -20V -10mA, ⎯ MHz f = 100MHz V = -5.0V -100μ 4 1.0kΩ 1.0kHz S O Fire Retardants © Diodes Incorporated Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° MMBT4126 ...
Page 2
... Saturation Voltage vs. Collector Current DS30106 Rev 100 10 1 200 150 175 0 0.1 0.01 1,000 100 1 Fig. 4, Typical Collector-Emitter Saturation Voltage 100 www.diodes.com 1 100 COLLECTOR-BASE VOLTAGE (V) CB Fig. 2, Input and Output Capacitance vs. Collector-Base Voltage 10 100 1,000 I , COLLECTOR CURRENT (mA) C vs. Collector Current MMBT4126 © Diodes Incorporated ...
Page 3
... Ordering Information (Note 5) Device MMBT4126-7-F Notes: 5. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 1998 1999 2000 Code Month Jan Feb Code 1 2 Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...