2N4401G ON Semiconductor, 2N4401G Datasheet - Page 3

• Manufacturer Part Number: 2N4401G
• Description: TRANS SS NPN GP 40V 600MA TO-92
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of 2N4401G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 1V
• Power - Max: 625mW
• Frequency - Transition: 250MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage(max): 60V
• Emitter-base Voltage (max): 6V
• Collector Current (dc) (max): 600mA
• Power Dissipation: 625mW
• Frequency (max): 250MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Configuration: Single
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.6 A
• Maximum Dc Collector Current: 0.6 A
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 20 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 600 mA
• Current, Gain: 40
• Frequency: 250 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/W
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.75 V
• Voltage, Emitter To Base: 6 V
• Dc: 1126
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 2N4401G; 2N4401GOS

- 2.0 V
100
7.0
5.0
3.0
2.0
7.0
+16 V
5.0
0
30
20
10
70
50
30
20
10
0.1
10
0.2
< 2.0 ns
0.3
20
Figure 1. Turn−On Time
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
0.5
I
Figure 5. Turn−On Time
Figure 3. Capacitances
30
C
REVERSE VOLTAGE (VOLTS)
, COLLECTOR CURRENT (mA)
1.0
50
1.0 kW
2.0
70
SWITCHING TIME EQUIVALENT TEST CIRCUITS
3.0
100
C
5.0
obo
t
t
t
t
r
r
d
d
TRANSIENT CHARACTERISTICS
@ V
@ V
@ V
@ V
+ 30 V
200 W
CC
CC
EB
EB
10
200
I
C
= 30 V
= 10 V
= 2.0 V
= 0
/I
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
B
C
= 10
S
20
300
* < 10 pF
C
http://onsemi.com
25°C
cb
30
500
50
3
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
7.0
100°C
5.0
10
70
50
30
20
10
+16 V
10
10
0
-14 V
V
I
C
CC
/I
B
= 30 V
= 10
20
20
t
f
Figure 6. Rise and Fall Times
Figure 2. Turn−Off Time
1.0 to 100 ms,
DUTY CYCLE ≈ 2.0%
I
I
30
30
C
C
< 20 ns
t
Figure 4. Charge Data
r
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
50
50
1.0 kW
70
70 100
100
- 4.0 V
Q
T
200
200
V
I
C
CC
/I
+ 30 V
200 W
B
= 30 V
= 10
300
300
C
Q
S
A
* < 10 pF
500
500