NSS40200UW6T1G ON Semiconductor, NSS40200UW6T1G Datasheet
NSS40200UW6T1G
Manufacturer Part Number
NSS40200UW6T1G
Description
TRANSISTOR PNP 4A 40V 6-WDFN
Manufacturer
ON Semiconductor
Specifications of NSS40200UW6T1G
Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
300mV @ 20mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 1A, 2V
Power - Max
875mW
Frequency - Transition
140MHz
Mounting Type
Surface Mount
Package / Case
6-VDFN Exposed Pad
Configuration
Single Quad Collector
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
7 V
Continuous Collector Current
- 2 V
Maximum Dc Collector Current
2 A
Power Dissipation
875 mW
Maximum Operating Frequency
140 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
150
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NSS40200UW6T1G
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NSS40200UW6T1G
Manufacturer:
ON Semiconductor
Quantity:
2 200
Part Number:
NSS40200UW6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
NSS40200UW6T1G
40 V, 4.0 A, Low V
PNP Transistor
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
3. Thermal response.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 0
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
Total Device Dissipation, T
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation, T
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
ON Semiconductor’s e
Typical applications are DC−DC converters and power management
This is a Pb−Free Device
Characteristic
Rating
2
2
, 1 oz copper traces.
, 1 oz copper traces.
CE(sat)
(T
A
A
A
= 25°C)
= 25°C
= 25°C
) and high current gain capability. These
2
PowerEdge family of low V
R
R
R
(Notes 2 & 3)
P
P
qJA
qJA
qJL
D
D
Symbol
Symbol
P
T
V
V
V
ESD
(Note 1)
(Note 2)
Dsingle
J
I
(Note 1)
(Note 2)
(Note 2)
CEO
CBO
, T
2
EBO
CM
I
C
PowerEdge devices to be
stg
CE(sat)
−55 to
+150
HBM Class 3B
Max
−7.0
−2.0
−4.0
Max
11.8
−40
−40
875
143
7.0
1.5
3.0
85
23
MM Class C
1
mW/°C
mW/°C
°C/W
°C/W
°C/W
CE(sat)
Unit
Unit
Vdc
Vdc
Vdc
Adc
mW
°C
W
W
A
†For information on tape and reel specifications,
NSS40200UW6T1G
PNP LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
EQUIVALENT R
(Note: Microdot may be in either location)
Device
Pin 1
E
ORDERING INFORMATION
VA = Specific Device Code
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
= Date Code
= Pb−Free Package
−40 VOLTS
3
4.0 AMPS
CE(sat)
1
2
3
C
VA MG
COLLECTOR
(Pb−Free)
Package
WDFN6
Publication Order Number:
EMITTER
G
1, 2, 5, 6
DS(on)
CASE 506AP
TRANSISTOR
4
6
5
4
WDFN6
NSS40200UW6/D
100 mW
Tape & Reel
Shipping
3000/
†
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NSS40200UW6T1G Summary of contents
Page 1
... Microdot may be in either location) ORDERING INFORMATION Device Package Shipping WDFN6 3000/ NSS40200UW6T1G (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSS40200UW6/D † ...
Page 2
... C B1 Rise ( 750 mA mA Storage ( 750 mA mA Fall ( 750 mA mA Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. NSS40200UW6T1G (T = 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO CE(sat) V BE(sat) V BE(on Cibo ...
Page 3
... I , COLLECTOR CURRENT (A) C Figure 5. Base Emitter Turn−On Voltage vs. Collector Current NSS40200UW6T1G 0. 100 150°C 0.25 0.20 0.15 0.10 0.05 −55°C 0 1.0 10 0.001 Figure 2. Collector Emitter Saturation Voltage 1 ...
Page 4
... V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1 0.1 0.01 0.01 NSS40200UW6T1G 140 C (pF) 130 ibo 120 110 100 4.0 5.0 6.0 0 5.0 V 1.0 S 100 mS Thermal Limit 0 Figure 9. PNP Safe Operating Area http://onsemi ...
Page 5
... Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NSS40200UW6T1G PACKAGE DIMENSIONS WDFN6 2x2 CASE 506AP−01 ISSUE B ...