NSS20200LT1G ON Semiconductor, NSS20200LT1G Datasheet
NSS20200LT1G
Specifications of NSS20200LT1G
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NSS20200LT1G Summary of contents
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... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSS20200LT1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter−Base Breakdown Voltage (I = −0.1 mAdc ...
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V CE(sat) IC/ 0.2 0.15 0.1 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 800 750 150°C (5.0 V) 700 650 150°C (2.0 V) 600 ...
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V , EMITTER BASE VOLTAGE (V) EB Figure 7. Input Capacitance 10 1.0 0.1 0.01 0.01 170 C (pF) ibo 150 130 110 90 70 ...
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... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...