NSS60200LT1G ON Semiconductor, NSS60200LT1G Datasheet

TRANS PNP 60V 4A SOT-23

NSS60200LT1G

Manufacturer Part Number
NSS60200LT1G
Description
TRANS PNP 60V 4A SOT-23
Manufacturer
ON Semiconductor
Datasheet

Specifications of NSS60200LT1G

Transistor Type
PNP
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
220mV @ 200mA, 2A
Dc Current Gain (hfe) (min) @ Ic, Vce
150 @ 500mA, 2V
Power - Max
460mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
7 V
Maximum Dc Collector Current
2 A
Power Dissipation
540 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
150 at 10 mA at 2 V
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Collector-emitter Voltage
60V
Collector-base Voltage
80V
Emitter-base Voltage
7V
Collector Current (dc) (max)
2A
Dc Current Gain (min)
150
Frequency (max)
100MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
NSS60200LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NSS60200LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NSS60200LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
NSS60200LT1G
0
NSS60200LT1G
60 V, 4.0 A, Low V
PNP Transistor
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage
ON Semiconductor’s e
Typical applications are DC−DC converters and power management
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
T
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
Temperature Range
A
A
= 25°C
= 25°C
Characteristic
Rating
2
2
, 1 oz. copper traces.
, 1 oz. copper traces.
CE(sat)
(T
A
= 25°C)
) and high current gain capability. These
2
PowerEdge family of low V
R
R
P
P
qJA
qJA
D
D
Symbol
Symbol
T
V
V
V
(Note 1)
(Note 2)
J
I
(Note 1)
(Note 2)
CEO
CBO
EBO
, T
CM
I
C
stg
2
PowerEdge devices to be
CE(sat)
−55 to
+150
Max
−7.0
−2.0
−4.0
Max
−60
−80
460
270
540
230
3.7
4.3
1
mW/°C
mW/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
CE(sat)
°C
A
A
†For information on tape and reel specifications,
NSS60200LT1G
PNP LOW V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
EQUIVALENT R
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
Device
−60 VOLTS, 4.0 AMPS
ORDERING INFORMATION
VG = Specific Device Code
M
G
BASE
MARKING DIAGRAM
http://onsemi.com
1
= Date Code*
= Pb−Free Package
SOT−23 (TO−236)
1
1
CE(sat)
(Pb−Free)
CASE 318
Package
SOT−23
STYLE 6
COLLECTOR
VG MG
EMITTER
2
Publication Order Number:
G
3
2
DS(on)
TRANSISTOR
3
3000/Tape & Reel
Shipping
NSS60200L/D
80 mW

Related parts for NSS60200LT1G

NSS60200LT1G Summary of contents

Page 1

... Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSS60200LT1G SOT−23 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = −10 mAdc Collector −Base Breakdown Voltage (I = −0.1 mAdc Emitter−Base Breakdown Voltage (I = −0.1 mAdc ...

Page 3

V CE(sat) IC/ 0.15 0.1 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current 400 150°C (5.0 V) 350 150°C (2.0 V) 300 25°C (5.0 V) ...

Page 4

0.8 100 mA 0.6 0.4 0.2 0 0.01 0.1 1 BASE CURRENT (mA) B Figure 7. Saturation Region ...

Page 5

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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