MPS751RLRAG ON Semiconductor, MPS751RLRAG Datasheet - Page 2

• Manufacturer Part Number: MPS751RLRAG
• Description: TRANS AMP PNP 2A 60V TO92
• Manufacturer: ON Semiconductor

Specifications of MPS751RLRAG

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 75 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 75 at 50 mA at 2 V
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 60V
• Collector-base Voltage: 80V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 2A
• Dc Current Gain (min): 75
• Frequency (max): 75MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPS751RLRAGOS; MPS751RLRAGOS; MPS751RLRAGOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL−SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. f
Collector −Emitter Breakdown Voltage (Note 1)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base−Emitter On Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product (Note 2)
300
270
240
210
180
150
120
90
60
30
T
0
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
10
is defined as the frequency at which |h
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
= 10 mAdc, I
= 100 mAdc, I
= 0, I
= 50 mA, V
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 2.0 A, I
= 1.0 A, I
= 1.0 A, V
= 1.0 A, I
= 50 mAdc, V
T
J
−55 °C
= 4.0 V, I
= 60 Vdc, I
= 80 Vdc, I
20
= 125°C
25°C
E
= 10 mAdc)
B
B
B
CE
CE
CE
50
Figure 1. MPS650, MPS651
C
= 200 mA)
= 100 mA)
= 100 mA)
CE
Typical DC Current Gain
CE
B
I
E
E
= 0)
= 2.0 V)
= 2.0 V)
= 2.0 V)
E
C
CE
, COLLECTOR CURRENT (mA)
= 2.0 V)
= 0)
= 0)
= 0)
= 0 )
= 2.0 V)
100
= 5.0 Vdc, f = 100 MHz)
NPN − MPS650, MPS651; PNP − MPS750, MPS751
200
NPN
Characteristic
500 1.0 A 2.0 A 4.0 A
(T
C
fe
| extrapolates to unity.
= 25°C unless otherwise noted)
V
CE
= 2.0 V
http://onsemi.com
MPS650, MPS750
MPS651, MPS751
MPS650, MPS750
MPS651, MPS751
MPS650, MPS750
MPS651, MPS751
2
250
225
200
175
150
125
100
75
50
25
0
−10 −20
T
J
= 125°C
25°C
−55 °C
−50 −100 −200
V
V
Figure 2. MPS750, MPS751
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
Typical DC Current Gain
(BR)EBO
I
I
I
CE(sat)
BE(sat)
BE(on)
C
h
CBO
EBO
, COLLECTOR CURRENT (mA)
f
FE
T
PNP
Min
5.0
40
60
60
80
75
75
75
40
75
−
−
−
−
−
−
−
−500
−1.0 A −2.0 A −4.0 A
Max
0.1
0.1
0.1
0.5
0.3
1.0
1.2
−
−
−
−
−
−
−
−
−
−
V
CE
= −2.0 V
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−