MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 3
MMBT6427LT1G
Manufacturer Part Number
MMBT6427LT1G
Description
TRANS SS DARL NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Small Signalr
Specifications of MMBT6427LT1G
Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1.5V @ 500µA, 500mA
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20000 @ 100mA, 5V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
12 V
Collector- Base Voltage Vcbo
40 V
Maximum Dc Collector Current
0.5 A
Maximum Collector Cut-off Current
0.05 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
10000
Minimum Operating Temperature
- 55 C
Capacitance, Input
15 pF
Current, Gain
140000
Current, Output
500 mADC
Package Type
SOT-23
Polarity
NPN
Primary Type
Si
Resistance, Thermal, Junction To Ambient
556
Voltage, Collector To Emitter, Saturation
1.5 VDC
Voltage, Input
12 VDC
Voltage, Output
40 VDC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBT6427LT1GOS
MMBT6427LT1GOS
MMBT6427LT1GOSTR
MMBT6427LT1GOS
MMBT6427LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
6 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Company:
Part Number:
MMBT6427LT1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MMBT6427LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
1.0
10
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
R
Figure 2. Noise Voltage
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
≈ 0
50
I
C
= 1.0 mA
100
100 mA
5 k 10 k 20 k
200
NOISE CHARACTERISTICS
10 mA
(V
CE
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
1000
3
0.07
0.05
0.03
0.02
A
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
6.0
4.0
2.0
14
12
10
0
= 25°C)
10 20
1.0
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k
200
500 1000
50 k 100 k