MMBTA13LT1G ON Semiconductor, MMBTA13LT1G Datasheet

TRANS SS DARL NPN 30V SOT23

MMBTA13LT1G

Manufacturer Part Number
MMBTA13LT1G
Description
TRANS SS DARL NPN 30V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMBTA13LT1G

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
300mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
225mW
Frequency - Transition
125MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
10 V
Collector- Base Voltage Vcbo
30 V
Maximum Dc Collector Current
0.3 A
Maximum Collector Cut-off Current
0.1 uA
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Continuous Collector Current
0.3 A
Dc Collector/base Gain Hfe Min
5000
Minimum Operating Temperature
- 55 C
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage
30V
Emitter-base Voltage
10V
Collector-emitter Saturation Voltage
1.5V
Collector Current (dc) (max)
300mA
Dc Current Gain
5000
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
MMBTA13LT1GOS
MMBTA13LT1GOS
MMBTA13LT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBTA13LT1G
Manufacturer:
ON
Quantity:
66 000
Part Number:
MMBTA13LT1G
Manufacturer:
ON Semiconductor
Quantity:
2 050
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MMBTA13LT1G
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Part Number:
MMBTA13LT1G
0
MMBTA13LT1G,
MMBTA14LT1G
Darlington Amplifier
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
(Note 1) T
Derate above 25°C
Substrate, (Note 2) T
Derate above 25°C
Characteristic
A
= 25°C
Rating
A
= 25°C
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CBO
EBO
, T
CES
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
300
225
556
300
417
1.8
2.4
30
30
10
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
°C
†For information on tape and reel specifications,
MMBTA13LT1G
MMBTA14LT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation and/or overbar may
Device
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
2
1x = Device Code
M
G
MARKING DIAGRAM
http://onsemi.com
= Date Code*
= Pb−Free Package
BASE
x = M for MMBTA13LT1
x = N for MMBTA14LT1
3
1
COLLECTOR 3
1
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
EMITTER 2
1x M G
G
Publication Order Number:
SOT−23 (TO−236)
CASE 318
3,000 / Tape & Reel
3,000 / Tape & Reel
STYLE 6
MMBTA13LT1/D
Shipping

Related parts for MMBTA13LT1G

MMBTA13LT1G Summary of contents

Page 1

... R 417 °C/W qJA −55 to +150 °C J stg MMBTA13LT1G MMBTA14LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com COLLECTOR 3 BASE 1 EMITTER 2 3 SOT−23 (TO−236) ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 100 mAdc Collector Cutoff Current ( Vdc Emitter Cutoff Current ( Vdc ...

Page 3

BANDWIDTH = 1.0 Hz ≈ 200 100 50 100 1 5 100 200 500 FREQUENCY ...

Page 4

SMALL−SIGNAL CHARACTERISTICS 20 10 7.0 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2 REVERSE VOLTAGE (VOLTS) R Figure 6. Capacitance 200 125°C J 100 25° ...

Page 5

D = 0.5 0.5 0.2 0.3 0.2 SINGLE PULSE 0.05 0.1 0.1 0.07 SINGLE PULSE 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 1.0 k 700 500 300 200 100 0.4 0.6 ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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