MMBTA14LT1G ON Semiconductor, MMBTA14LT1G Datasheet - Page 5

• Manufacturer Part Number: MMBTA14LT1G
• Description: TRANS SS DARL NPN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA14LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.3 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.3 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBTA14LT1GOS; MMBTA14LT1GOS; MMBTA14LT1GOSTR

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.2
D = 0.5
0.2
0.1
0.05
0.5
1.0
SINGLE PULSE
Design Note: Use of Transient Thermal Resistance Data
1.0 k
SINGLE PULSE
700
500
300
200
100
70
50
30
20
10
2.0
0.4
Figure 13. Active Region Safe Operating Area
0.6
T
A
= 25°C
V
5.0
CE
1.0
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 12. Thermal Response
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
http://onsemi.com
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
10
t
1
2.0
FIGURE A
P
P
1/f
t
20
P
t, TIME (ms)
5
4.0
6.0
50
T
t 1
t P
C
P
= 25°C
10
100
P
1.0 s
P
1.0 ms
Z
Z
100 ms
qJC(t)
qJA(t)
20
200
= r(t) • R
= r(t) • R
40
500
qJC
qJA
T
T
J(pk)
J(pk)
1.0 k
- T
- T
A
C
= P
= P
2.0 k
(pk)
(pk)
Z
Z
qJA(t)
qJC(t)
5.0 k 10 k