BC 817K-25 E6327 Infineon Technologies, BC 817K-25 E6327 Datasheet - Page 4

• Manufacturer Part Number: BC 817K-25 E6327
• Description: TRANSISTOR NPN AF 45V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 817K-25 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 500mW
• Frequency - Transition: 170MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 160 at 100 mA at 1 V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 170 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC817K-25E6327INTR; BC817K25E6327XT; SP000271875

Electrical Characteristics at T
Parameter
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
V
Emitter-base capacitance
V
V
1
2
C
For all BC817 and BC818 subtypes
For all BC817K and BC818K subtypes
CB
CB
EB
EB
= 50 mA, V
= 0.5 V, f = 1 MHz
= 0.5 V, f = 1 MHz
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
CE
= 5 V, f = 100 MHz
1)
2)
1)
2)
A
= 25°C, unless otherwise specified
4
Symbol
f
C
C
T
cb
eb
min.
-
-
-
-
-
Values
BC817.../BC818...
typ.
170
60
40
6
3
max.
2008-04-11
-
-
-
-
-
Unit
MHz
pF