BSS63LT1G ON Semiconductor, BSS63LT1G Datasheet - Page 2

• Manufacturer Part Number: BSS63LT1G
• Description: TRANS PNP 100V 100MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS63LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 95MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: PNP
• Number Of Elements: 1
• Collector-emitter Voltage: 100V
• Collector-base Voltage: 110V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 30
• Power Dissipation: 300mW
• Frequency (max): 95MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 100 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: - 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Maximum Operating Frequency: 95 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 30 at 10 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BSS63LT1G; BSS63LT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
Collector −Emitter Breakdown Voltage
(I
Collector −Emitter Breakdown Voltage
(I
Collector −Base Breakdown Voltage
(I
Emitter −Base Breakdown Voltage
(I
Collector Cutoff Current
(V
Collector Cutoff Current
(V
Emitter Cutoff Current
(V
DC Current Gain
(I
(I
Collector −Emitter Saturation Voltage
(I
Base −Emitter Saturation Voltage
(I
Current −Gain − Bandwidth Product
(I
Case Capacitance
(I
C
C
E
E
C
C
C
C
C
E
CB
CE
EB
= −10 mAdc, I
= −10 mAdc)
= I
= −100 mAdc)
= −10 mAdc, I
= −10 mAdc, V
= −25 mAdc, V
= −25 mAdc, I
= −25 mAdc, I
= −25 mAdc, V
= −90 Vdc, I
= −110 Vdc, R
= −6.0 Vdc, I
C
= 0, V
CB
E
E
= −10 Vdc, f = 1.0 MHz)
B
B
E
C
CE
CE
CE
= 0, R
= 0)
= −2.5 mAdc)
= −2.5 mAdc)
= 0)
BE
= 0)
= −1.0 Vdc)
= −1.0 Vdc)
= −5.0 Vdc, f = 20 MHz)
= 10 kW)
BE
= 10 kW)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)CER
(BR)EBO
I
CE(sat)
BE(sat)
I
I
h
CBO
CER
EBO
C
f
FE
T
C
−100
−110
−110
−6.0
Min
30
30
50
−
−
−
−
−
−
Typ
95
−
−
−
−
−
−
−
−
−
−
−
−
−100
−200
−250
−900
Max
−10
20
−
−
−
−
−
−
−
mVdc
mVdc
nAdc
mAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−