MMBT3904WT1G ON Semiconductor, MMBT3904WT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT3904WT1G
• Description: TRANS GP SS NPN 40V SOT323
• Manufacturer: ON Semiconductor
• Type: General Purposer

Specifications of MMBT3904WT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 150 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: 200 mA
• Current, Gain: 30
• Frequency: 300 MHz
• Package Type: SC-70 (SOT-323)
• Polarity: NPN
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: 40 V
• Voltage, Collector To Base: 60 V
• Voltage, Collector To Emitter: 40 V
• Voltage, Collector To Emitter, Saturation: 0.3 V
• Voltage, Emitter To Base: 6 V
• Number Of Elements: 1
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT3904WT1GOS; MMBT3904WT1GOS; MMBT3904WT1GOSTR

500
300
200
100
500
300
200
100
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
SOURCE RESISTANCE = 500 W
I
I
C
C
MMBT3904WT1
MMBT3904WT1
/I
= 100 mA
0.2
B
= 20
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
SOURCE RESISTANCE = 200 W
I
2.0 3.0
C
2.0 3.0
= 1.0 mA
0.4
I
Figure 3. Turn −On Time
SOURCE RESISTANCE = 200 W
I
Figure 7. Noise Figure
I
C
I
Figure 5. Storage Time
C
C
C
/I
5.0 7.0
, COLLECTOR CURRENT (mA)
5.0 7.0
, COLLECTOR CURRENT (mA)
= 0.5 mA
B
1.0
= 10
f, FREQUENCY (kHz)
2.0
SOURCE RESISTANCE = 1.0 k
I
10
10
C
= 50 mA
t
d
@ V
4.0
(V
20
20
OB
TYPICAL TRANSIENT CHARACTERISTICS
CE
= 0 V
30
30
10
= 5.0 Vdc, T
MMBT3904WT1
t
50
50
I
r
C
20
@ V
/I
t′
I
B
B1
70
70
s
= 20
I
I
CC
C
= t
C
= I
/I
40
/I
100
100
2.0 V
B
B
s
= 3.0 V
B2
-
http://onsemi.com
= 10
= 10
MMBT3904WT1
15 V
40 V
1
/
8
A
t
100
f
= 25°C, Bandwidth = 1.0 Hz)
200
200
T
T
J
J
4
= 25°C
= 125°C
500
300
200
100
500
300
200
100
14
12
10
70
50
30
20
10
70
50
30
20
10
8
6
4
2
0
7
5
7
5
0.1
1.0
1.0
f = 1.0 kHz
0.2
2.0 3.0
MMBT3904WT1
2.0 3.0
MMBT3904WT1
I
0.4
C
= 0.5 mA
R
S
, SOURCE RESISTANCE (k OHMS)
I
I
Figure 8. Noise Figure
C
C
I
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0
5.0 7.0
I
Figure 4. Rise Time
= 1.0 mA
C
Figure 6. Fall Time
1.0
/I
B
= 10
2.0
10
10
I
C
4.0
/I
B
20
20
= 20
30
30
10
I
C
MMBT3904WT1
50
50
= 100 mA
20
V
I
V
I
70
70
I
B1
C
C
CC
CC
/I
= 50 mA
B
= I
100
100
40
= 40 V
= 40 V
= 10
B2
100
200
200