BC848CLT1G ON Semiconductor, BC848CLT1G Datasheet - Page 4

• Manufacturer Part Number: BC848CLT1G
• Description: TRANS NPN LP 100MA 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC848CLT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC848CLT1GOSTR

2.0
1.6
1.2
0.8
0.4
7.0
5.0
3.0
2.0
1.0
10
0
0.02
0.4 0.6
Figure 5. Collector Saturation Region
10 mA
I
0.8
C
=
1.0
V
R
20 mA
, REVERSE VOLTAGE (VOLTS)
I
C
Figure 7. Capacitances
I
0.1
B
=
, BASE CURRENT (mA)
2.0
I
C
C
= 50 mA
ib
4.0
C
ob
6.0
1.0
T
8.0
A
I
C
= 25°C
10
= 100 mA
I
C
= 200 mA
BC846A, BC847A, BC848A
T
A
20
= 25°C
http://onsemi.com
10
20
40
4
400
300
200
100
80
60
40
30
20
1.0
1.2
1.6
2.0
2.4
2.8
0.5
0.2
Figure 6. Base−Emitter Temperature Coefficient
Figure 8. Current−Gain − Bandwidth Product
0.7 1.0
-55°C to +125°C
I
C
, COLLECTOR CURRENT (mAdc)
I
C
, COLLECTOR CURRENT (mA)
2.0
1.0
3.0
5.0
7.0
10
10
20
V
T
A
CE
= 25°C
= 10 V
30
50
100