2SA1837(F,M) Toshiba, 2SA1837(F,M) Datasheet
2SA1837(F,M)
Manufacturer Part Number
2SA1837(F,M)
Description
TRANS PNP -230V -1A 2-10R1A
Manufacturer
Toshiba
Datasheet
1.2SA1837FM.pdf
(4 pages)
Specifications of 2SA1837(F,M)
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
230V
Vce Saturation (max) @ Ib, Ic
1.5V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
2W
Frequency - Transition
70MHz
Mounting Type
Through Hole
Package / Case
2-10R1A (TO-220 NIS)
Transistor Polarity
PNP
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
230 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
1 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
70 MHz
Number Of Elements
1
Collector-emitter Voltage
230V
Collector-base Voltage
230V
Emitter-base Voltage
5V
Collector Current (dc) (max)
1A
Dc Current Gain (min)
100
Frequency (max)
70MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-220(NIS)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SA1837FM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA1837(F,M)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Power Amplifier Applications
Driver Stage Amplifier Applications
•
•
Absolute Maximum Ratings
High transition frequency: f
Complementary to 2SC4793
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
Ta = 25°C
Tc = 25°C
TOSHIBA Transistor Silicon PNP Epitaxial Type
T
= 70 MHz (typ.)
(Tc = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SA1837
j
−55 to 150
Rating
−230
−230
−0.1
150
2.0
−5
−1
20
1
Unit
°C
°C
W
V
V
V
A
A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10R1A
2006-11-09
―
―
2SA1837
Unit: mm
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2SA1837(F,M) Summary of contents
Page 1
... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Marking A1837 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package ...
Page 3
I – −1.0 −20 −10 −0.8 −0.6 −0 −2 mA −0.2 Common emitter Tc = 25° −2 −4 −6 −8 Collector-emitter voltage – 1000 Common emitter ...
Page 4
... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...