2SB1182TLQ Rohm Semiconductor, 2SB1182TLQ Datasheet - Page 3

• Manufacturer Part Number: 2SB1182TLQ
• Description: TRANSISTOR PNP 32V 2A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1182TLQ

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 32V
• Vce Saturation (max) @ Ib, Ic: 800mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 3V
• Power - Max: 10W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Bce Pnp: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 32V
• Power Dissipation Pd: 1W
• Dc Collector Current: 2A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-428
• No. Of Pins: 3
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 32 V
• Emitter- Base Voltage Vebo: - 5 V
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 10 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: - 2 A
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 100 MHz
• Maximum Operating Frequency: 100 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1182TLQ; 2SB1182TLQTR

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2SB1182 / 2SB1240
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2010 ROHM Co., Ltd. All rights reserved.
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COLLECTOR TO EMITTER VOLTAGE : V
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Fig.10 Safe operation area
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2010.04 - Rev.C
Data Sheet