2SC4505T100P Rohm Semiconductor, 2SC4505T100P Datasheet - Page 2

• Manufacturer Part Number: 2SC4505T100P
• Description: TRANS NPN 400V 100MA SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SC4505T100P

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 10mA, 10V
• Power - Max: 2W
• Frequency - Transition: 20MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Npn: MPT3
• Collector Emitter Voltage V(br)ceo: 400V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 10mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of Pins: 3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 400 V
• Emitter- Base Voltage Vebo: 7 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 20 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 82
• Gain Bandwidth Product Ft: 20 MHz
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SC4505T100P; 2SC4505T100PTR

Transistors
Fig.7 Gain bandwidth product vs. emitter current
Fig.4 DC current gain vs. collector current ( ΙΙ )
Fig.1 Ground emitter output characteristics
Electrical characteristics (Ta=25 ° C)
1000
1000
500
200
100
500
200
100
200
160
120
50
20
10
50
20
10
80
40
0
COLLECTOR TO EMITTER VOLTAGE : V
5
2
1
5
2
1
0.001 0.002 0.005 0.01 0.02
0
−0.005 −0.01 −0.02
COLLECTOR CURRENT : I
Ta =100 °C
2
EMITTER CURRENT : I
−25 °C
4
−0.05 −0.1 −0.2
0.05
25°C
6
0.1 0.2
E
−0.5 −1 −2
(A)
Ta =25 °C
V
C
Ta =25 °C
8
V
CE
I
(A)
B
CE
=0mA
=10V
0.5
=10V
CE
10
(V)
1
Fig.5 Collector-emitter saturation voltage
Fig.2 Ground emitter propagation characterisitics
Fig.8 Collector output capacitance
0.005
0.002
0.001
1000
0.05
0.02
0.01
0.05
0.02
0.01
500
200
100
0.5
0.2
0.1
0.5
0.2
0.1
10
50
20
10
1
0.001 0.002 0.005
5
2
1
5
2
1
0
0.1 0.2
COLLECTOR TO BASE VOLTAGE : V
vs. collector current
BASE TO EMITTER VOLTAGE : V
vs. collector-base voltage
0.2
COLLECTOR CURRENT : I
I
C
0.5
/I
0.4 0.6
B
=20
10
5
0.01 0.02
1
2
0.8
0.05
5
1.0 1.2
0.1 0.2
10
20
Ta =25 °C
C
Ta =25 °C
f=1MHz
I
V
E
(A)
CE
BE
=0A
1.4 1.6
0.5
=3V
50
CB
(V)
(V)
100
1
Fig.6 Collector-emitter saturation voltage
Fig.3 DC current gain vs. collector current ( Ι )
1000
0.001
500
200
100
0.01
0.05
0.02
0.01
10
Collector-base saturation voltage vs. collector current
0.1
50
20
10
0.5
0.2
0.1
5
2
1
0.001 0.002 0.005 0.01 0.02
5
2
1
0.001 0.002 0.005 0.01 0.02
0.1
COLLECTOR TO EMITTER VOLTAGE : V
1
Ta =25 °C
∗Single
nonrepetitive pulse
Ta =−25 °C
Ic Max. (Pulse∗)
Fig.9 Safe operating area
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
25 °C
25 °C
Ta =100 °C
1
100 °C
−25 °C
Rev.D
V
DC
BE(sat)
10
0.05
0.05
2SC4505
Pw=100m
Pw=10m
5V
V
0.1 0.2
0.1 0.2
CE(sat)
100
C
V
C
Ta =25 °C
I
(A)
CE
C
(A)
/ I
=10V
0.5
B
0.5
Pw=1m
=10
CE
2/3
1000
(V)
1
1