2SD2098T100R Rohm Semiconductor, 2SD2098T100R Datasheet - Page 3

• Manufacturer Part Number: 2SD2098T100R
• Description: TRANS NPN 20V 5A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SD2098T100R

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100mA, 4A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 500mA, 2V
• Power - Max: 2W
• Frequency - Transition: 150MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Mpt3: NPN
• Collector Emitter Voltage V(br)ceo: 20V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 4A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of Pins: 3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 20 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 5 A
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 2 W
• Maximum Operating Frequency: 150 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 150 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SD2098T100R; 2SD2098T100RTR

Transistors
! ! ! ! Electrical characteristic curves
Fig.1 Grounded emitter propagation
0.05
0.02
0.01
0.05
0.02
0.01
5000
2000
1000
200
0.5
0.2
0.1
5m
2m
1m
0.5
0.2
0.1
500
100
10
50
20
10
5
2
1
2
1
2m 5m 0.010.02 0.05 0.1 0.2 0.5 1 2
5
1m
0
Fig.7 Collector-emitter
BASE TO EMITTER VOLTAGE : V
2m 5m 0.010.02 0.05 0.10.2 0.5 1 2
Fig.4 DC current gain vs.
0.2
characteristics
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
Ta=100°C
saturation voltage vs.
collector current ( ΙΙ )
0.4
−25°C
collector current ( ΙΙ )
25°C
Ta=100°C
−25°C
0.6
25°C
Ta=100°C
−25°C
0.8
25°C
1.0
C
C
V
l
C
(A)
V
(A)
CE
1.2
/l
BE
CE
B
=2V
=10
=1V
(V)
5 10
5 10
1.4
0.05
0.02
0.01
COLLECTOR TO EMITTER VOLTAGE : V
5000
2000
1000
0.5
0.2
0.1
500
200
100
5
4
3
2
1
0
50
20
10
2
1
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
0
5
1m
Fig.2 Grounded emitter output
50mA
45mA
Fig.8 Collector-emitter
Fig.5 DC current gain vs.
2m 5m0.010.02 0.050.10.2 0.5 1 2
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
0.4
characteristics
saturation voltage vs.
collector current ( ΙΙΙ )
collector current ( ΙΙΙ )
35mA
Ta=100°C
0.8
40mA
−25°C
25°C
Ta=100°C
30mA
−25°C
25mA
25°C
1.2
2SD2098 / 2SD2118 / 2SD2097
20mA
Ta=25°C
1.6
C
15mA
l
C
C
(A)
I
V
/l
B
(A)
10mA
=0mA
B
CE
5mA
=30
CE
=2V
5 10
5 10
(V)
2.0
5000
2000
1000
0.05
0.02
0.01
0.05
0.02
0.01
500
200
100
0.5
0.2
0.1
0.5
0.2
0.1
50
20
10
5
2
1
2m 5m0.010.02 0.05 0.1 0.2 0.5 1 2
1m
2
1
2m
Fig.9 Collector-emitter
2m 5m 0.010.02 0.050.1 0.2 0.5 1 2
Fig.6 Collector-emitter
Fig.3 DC current gain vs.
5m0.010.02 0.05
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
I
C
/I
saturation voltage vs.
collector current (IV)
B
=50
saturation voltage vs.
collector current ( Ι )
40
30
10
collector current ( Ι )
Ta=100°C
0.1
0.2 0.5 1
−25°C
25°C
2V
V
C
C
C
Ta=25°C
Ta=25°C
1V
l
CE
(A)
2
(A)
C
(A)
/l
=5V
B
=40
5 10
5 10
5 10