2SB1561T100Q Rohm Semiconductor, 2SB1561T100Q Datasheet - Page 2

• Manufacturer Part Number: 2SB1561T100Q
• Description: TRANS PNP 60V 2A SOT-89
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1561T100Q

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 500mA, 2V
• Power - Max: 2W
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Bce Pnp: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 60V
• Power Dissipation Pd: 500mW
• Dc Collector Current: 1A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-89
• No. Of: RoHS Compliant
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 60 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 2 A
• Maximum Dc Collector Current: 2 A
• Power Dissipation: 0.5 W
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 120
• Gain Bandwidth Product Ft: 200 MHz
• Dc Current Gain Hfe: 120
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 2SB1561T100Q; 2SB1561T100QTR

 Electrical characteristic curves
○
2SB1561
c
www.rohm.com
1000
1000
2009 ROHM Co., Ltd. All rights reserved.
500
200
100
500
200
100
50
20
10
50
20
10
−5m −10m−100m
5
2
1
5
2
1
2m
−2.0
−1.6
−1.2
−0.8
−0.4
Fig.4 DC current gain
Fig.7 Gain bandwidth product
0.0
COLLECTOR TO EMITTER VOLTAGE : V
0
Fig.1 Grounded emitter output
5m 10m 20m
COLLECTOR CURRENT : I
EMITTER CURRENT : I
vs. emitter current
vs. collector current ( ΙΙ )
−1
characteristics
−100m
50m 100m200m 500m 1
−2
−3
−1
V
E
CE
C
(A)
Ta=25°C
= −5V
(A)
−4
−2V
−1V
−5
2
CE
−5
(V)
Fig.8 Collector output capacitance
−1000
1000
Fig.5 Collector-emitter saturation
−500
−200
−100
500
200
100
50
20
10
−50
−20
−10
5
2
1
−0.1
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
−5
−2
−1
−0.05
−0.02
−0.01
−5m −10m−100m
−0.5
−0.2
−0.1
−5m
−2m
−1m
Fig.2 Grounded emitter propagation
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
−5
−2
−1
voltage vs. collector current ( Ι )
0
BASE TO EMITTER VOLTAGE : V
COLLECTOR CURRENT : I
Ta=100°C
characteristics
−40°C
25°C
−0.4
−1
−100m
2/2
Cob
Cib
−0.8
−10
−1
Ta=25°C
−1.2
EB
C
(A)
V
(V)
CE
CE
−100
= − 2V
BE
(V)
−5
(V)
−1.6
500m
200m
100m
Fig.6 Collector-emitter saturation
50m
20m
10m
−1000
COLLECTOR TO EMITTER VOLTAGE : V
−500
−200
−100
50
20
10
−50
−20
−10
5
2
1
1000
−5
−2
−1
500
200
100
−5m −10m−100m
Ta=25°C
Single pulse
50
20
10
Ic max(Pulse)
−5m −10m−100m
5
2
1
0.2
voltage vs. collector current ( ΙΙ )
Fig.9 Safe operating area
0.5
COLLECTOR CURRENT : I
Fig.3 DC current gain vs.
COLLECTOR CURRENT : I
1
2
collector current ( Ι )
2009.12 - Rev.A
5
−100m
−100m
10 20
Data Sheet
50 100 200 500
−1
−1
Ta=25°C
C
V
C
(A)
CE
(A)
=2V
CE
−5
(V)
−5