QSX5TR Rohm Semiconductor, QSX5TR Datasheet
QSX5TR
Manufacturer Part Number
QSX5TR
Description
TRANS NPN BIPOLAR 12V 2A TSMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.QSX5TR.pdf
(3 pages)
Specifications of QSX5TR
Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
180mV @ 50mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
270 @ 200mA, 2V
Power - Max
1.25W
Frequency - Transition
360MHz
Mounting Type
Surface Mount
Package / Case
TSMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
QSX5TR
Manufacturer:
INFINEON
Quantity:
6 500
Transistors
Low frequency amplifier
QSX5
Low frequency amplifier
Driver
1)
2)
∗1
∗2
∗3
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Application
Features
Absolute maximum ratings (Ta=25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25°C)
A collector current is large.
V
At I
Single pulse, P
Each Terminal Mounted on a Recommended
Mounted on a
CE(sat)
C
= 1A / I
< =
180mV
Parameter
25mm×25mm×
B
W
Parameter
= 50mA
=1ms
t
0.8mm Ceramic substrate
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
Symbol
V
BV
BV
BV
−55 to +150
Cob
I
I
CE(sat)
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
Limits
1.25
500
150
15
12
6
2
4
Min.
270
15
12
6
−
−
−
−
−
Unit
mW
°C
°C
W
V
V
V
A
A
∗1
∗2
∗3
Typ.
360
90
20
−
−
−
−
−
−
External dimensions (Unit : mm)
Equivalent circuit
Max.
100
100
180
680
−
−
−
−
−
(6)
(1)
(5)
(2)
MHz
Unit
mV
nA
nA
pF
V
V
V
−
Abbreviated symbol : X05
I
I
I
V
V
I
V
V
V
(4)
(3)
C
C
E
C
CB
EB
CE
CE
CB
=10µA
=10µA
=1mA
=1A, I
=6V
=15V
=2V, I
=2V, I
=10V, I
Each lead has same dimensions
B
=50mA
C
E
Conditions
=200mA
=−200mA, f=100MHz
E
=0A, f=1MHz
Rev.A
∗
QSX5
∗
1/2
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QSX5TR Summary of contents
Page 1
Transistors Low frequency amplifier QSX5 Application Low frequency amplifier Driver Features 1) A collector current is large. < 180mV CE(sat 50mA Absolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base ...
Page 2
Transistors Packaging specifications Package Type Code Basic ordering unit (pieces) QSX5 Electrical characteristic curves 1000 =2V V Ta=100°C CE Pulsed Ta=25°C Ta=−40°C 100 10 0.001 0.01 0 COLLECTOR CURRENT : I (A) C Fig.1 DC current gain vs. ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...